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ISC079N15NM6ATMA1

ISC079N15NM6ATMA1 Infineon Technologies


Infineon_ISC079N15NM6_DataSheet_v02_00_EN-3478099.pdf Hersteller: Infineon Technologies
MOSFETs TRENCH >=100V
auf Bestellung 1030 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+6.56 EUR
10+4.84 EUR
25+4.29 EUR
100+3.75 EUR
250+3.45 EUR
500+3.24 EUR
1000+2.99 EUR
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Technische Details ISC079N15NM6ATMA1 Infineon Technologies

Description: TRENCH >=100V, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12.8A (Ta), 95A (Tc), Rds On (Max) @ Id, Vgs: 7.4mOhm @ 36A, 15V, Power Dissipation (Max): 3W (Ta), 165W (Tc), Vgs(th) (Max) @ Id: 4V @ 77µA, Supplier Device Package: PG-TDSON-8, Drive Voltage (Max Rds On, Min Rds On): 8V, 15V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 75 V.

Weitere Produktangebote ISC079N15NM6ATMA1 nach Preis ab 2.87 EUR bis 6.76 EUR

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ISC079N15NM6ATMA1 ISC079N15NM6ATMA1 Hersteller : Infineon Technologies Infineon-ISC079N15NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c90530b3a01907753460f7058 Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.8A (Ta), 95A (Tc)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 36A, 15V
Power Dissipation (Max): 3W (Ta), 165W (Tc)
Vgs(th) (Max) @ Id: 4V @ 77µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 75 V
auf Bestellung 4622 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.76 EUR
10+4.77 EUR
100+3.70 EUR
500+3.12 EUR
1000+2.89 EUR
2000+2.87 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
ISC079N15NM6ATMA1 ISC079N15NM6ATMA1 Hersteller : Infineon Technologies Infineon-ISC079N15NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c90530b3a01907753460f7058 Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.8A (Ta), 95A (Tc)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 36A, 15V
Power Dissipation (Max): 3W (Ta), 165W (Tc)
Vgs(th) (Max) @ Id: 4V @ 77µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 75 V
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Im Einkaufswagen  Stück im Wert von  UAH