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ISC0802NLSATMA1

ISC0802NLSATMA1 Infineon Technologies

Infineon_ISC0802NLS_DataSheet_v02_01_EN-2581263.pdf Hersteller: Infineon Technologies
MOSFET TRENCH >=100V
auf Bestellung 1034 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+4.77 EUR
10+ 3.96 EUR
100+ 3.15 EUR
250+ 3.08 EUR
500+ 2.68 EUR
1000+ 2.16 EUR
5000+ 2.08 EUR
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Technische Details ISC0802NLSATMA1 Infineon Technologies

Description: MOSFET N-CH 100V 22A/150A TDSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 150A (Tc), Rds On (Max) @ Id, Vgs: 3.6mOhm @ 50A, 10V, Power Dissipation (Max): 2.5W (Ta), 125W (Tc), Vgs(th) (Max) @ Id: 2.3V @ 92µA, Supplier Device Package: PG-TDSON-8-7, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5190 pF @ 50 V.

Weitere Produktangebote ISC0802NLSATMA1 nach Preis ab 3.17 EUR bis 4.79 EUR

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ISC0802NLSATMA1 ISC0802NLSATMA1 Hersteller : Infineon Technologies Infineon-ISC0802NLS-DataSheet-v02_01-EN.pdf?fileId=5546d46278d64ffd0178fd5988d16d8c Description: MOSFET N-CH 100V 22A/150A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 150A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 92µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5190 pF @ 50 V
auf Bestellung 199 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+4.79 EUR
10+ 3.98 EUR
100+ 3.17 EUR
Mindestbestellmenge: 4
ISC0802NLSATMA1 ISC0802NLSATMA1 Hersteller : Infineon Technologies Infineon-ISC0802NLS-DataSheet-v02_01-EN.pdf?fileId=5546d46278d64ffd0178fd5988d16d8c Description: MOSFET N-CH 100V 22A/150A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 150A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 92µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5190 pF @ 50 V
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