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ISC0806NLSATMA1

ISC0806NLSATMA1 Infineon Technologies

Infineon-ISC0806NLS-DataSheet-v02_01-EN.pdf?fileId=5546d46278d64ffd0178fd506b9f6d86 Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 16A/97A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 97A (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 96W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 61µA
Supplier Device Package: PG-TDSON-8-7
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 50 V
auf Bestellung 4880 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5+4.08 EUR
10+ 3.4 EUR
100+ 2.71 EUR
500+ 2.29 EUR
1000+ 1.94 EUR
2000+ 1.85 EUR
Mindestbestellmenge: 5
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Technische Details ISC0806NLSATMA1 Infineon Technologies

Description: MOSFET N-CH 100V 16A/97A TDSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 97A (Tc), Rds On (Max) @ Id, Vgs: 5.4mOhm @ 50A, 10V, Power Dissipation (Max): 2.5W (Ta), 96W (Tc), Vgs(th) (Max) @ Id: 2.3V @ 61µA, Supplier Device Package: PG-TDSON-8-7, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 50 V.

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ISC0806NLSATMA1 ISC0806NLSATMA1 Hersteller : Infineon Technologies Infineon_ISC0806NLS_DataSheet_v02_02_EN-2581268.pdf MOSFET TRENCH >=100V
auf Bestellung 13 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+4.7 EUR
10+ 4.14 EUR
100+ 3.33 EUR
500+ 2.8 EUR
1000+ 2.27 EUR
2500+ 2.2 EUR
5000+ 2.16 EUR
ISC0806NLSATMA1 Hersteller : Infineon Technologies infineon-isc0806nls-datasheet-v02_02-en.pdf N Channel Power Mosfet
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
ISC0806NLSATMA1 ISC0806NLSATMA1 Hersteller : Infineon Technologies Infineon-ISC0806NLS-DataSheet-v02_01-EN.pdf?fileId=5546d46278d64ffd0178fd506b9f6d86 Description: MOSFET N-CH 100V 16A/97A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 97A (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 96W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 61µA
Supplier Device Package: PG-TDSON-8-7
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 50 V
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