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ISC104N12LM6ATMA1 Infineon Technologies


Infineon-ISC104N12LM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee0185c27a5faf537b
Hersteller: Infineon Technologies
Description: OPTIMOS 6 POWER-TRANSISTOR,120V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 60 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Drain to Source Voltage (Vdss): 120 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8
Vgs(th) (Max) @ Id: 2.2V @ 35µA
Power Dissipation (Max): 3W (Ta), 94W (Tc)
Rds On (Max) @ Id, Vgs: 10.4mOhm @ 28A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 63A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
5000+1.24 EUR
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details ISC104N12LM6ATMA1 Infineon Technologies

Description: OPTIMOS 6 POWER-TRANSISTOR,120V, Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 60 V, Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V, Drain to Source Voltage (Vdss): 120 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V, Part Status: Active, Supplier Device Package: PG-TDSON-8, Vgs(th) (Max) @ Id: 2.2V @ 35µA, Power Dissipation (Max): 3W (Ta), 94W (Tc), Rds On (Max) @ Id, Vgs: 10.4mOhm @ 28A, 10V, Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 63A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR).

Weitere Produktangebote ISC104N12LM6ATMA1 nach Preis ab 1.33 EUR bis 3.98 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Preis
ISC104N12LM6ATMA1 ISC104N12LM6ATMA1 Infineon Technologies Infineon-ISC104N12LM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee0185c27a5faf537b Description: OPTIMOS 6 POWER-TRANSISTOR,120V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 60 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Drain to Source Voltage (Vdss): 120 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8
Vgs(th) (Max) @ Id: 2.2V @ 35µA
Power Dissipation (Max): 3W (Ta), 94W (Tc)
Rds On (Max) @ Id, Vgs: 10.4mOhm @ 28A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 63A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
auf Bestellung 5582 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.45 EUR
10+2.43 EUR
100+1.82 EUR
500+1.52 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
ISC104N12LM6ATMA1 ISC104N12LM6ATMA1 Infineon Technologies Infineon-ISC104N12LM6-DataSheet-v02_00-EN.pdf MOSFETs IFX FET >100-150V
auf Bestellung 21592 Stücke:
Lieferzeit 10-14 Tag (e)
1+3.98 EUR
10+2.57 EUR
100+1.78 EUR
500+1.42 EUR
1000+1.4 EUR
2500+1.33 EUR
Im Einkaufswagen  Stück im Wert von  UAH
ISC104N12LM6ATMA1 Infineon-ISC104N12LM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee0185c27a5faf537b
Hersteller: Infineon Technologies
Description: OPTIMOS 6 POWER-TRANSISTOR,120V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 60 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Drain to Source Voltage (Vdss): 120 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8
Vgs(th) (Max) @ Id: 2.2V @ 35µA
Power Dissipation (Max): 3W (Ta), 94W (Tc)
Rds On (Max) @ Id, Vgs: 10.4mOhm @ 28A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 63A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
auf Bestellung 5582 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
6+3.45 EUR
10+2.43 EUR
100+1.82 EUR
500+1.52 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
ISC104N12LM6ATMA1 Infineon-ISC104N12LM6-DataSheet-v02_00-EN.pdf
Hersteller: Infineon Technologies
MOSFETs IFX FET >100-150V
auf Bestellung 21592 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+3.98 EUR
10+2.57 EUR
100+1.78 EUR
500+1.42 EUR
1000+1.4 EUR
2500+1.33 EUR
Im Einkaufswagen  Stück im Wert von  UAH