| Anzahl | Preis |
|---|---|
| 2+ | 2.78 EUR |
| 10+ | 1.92 EUR |
| 100+ | 1.34 EUR |
| 500+ | 1.09 EUR |
| 1000+ | 0.97 EUR |
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Technische Details ISC110N12NM6ATMA1 Infineon Technologies
Description: TRENCH >=100V, Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 60 V, Gate Charge (Qg) (Max) @ Vgs: 19.3 nC @ 10 V, Drain to Source Voltage (Vdss): 120 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 8V, 10V, Supplier Device Package: SuperSO8, Vgs(th) (Max) @ Id: 3.6V @ 35µA, Power Dissipation (Max): 3W (Ta), 94W (Tc), Rds On (Max) @ Id, Vgs: 11mOhm @ 26A, 10V, Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 62A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote ISC110N12NM6ATMA1 nach Preis ab 0.99 EUR bis 2.9 EUR
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ISC110N12NM6ATMA1 | Infineon Technologies |
 Description: TRENCH >=100VInput Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 60 V Gate Charge (Qg) (Max) @ Vgs: 19.3 nC @ 10 V Drain to Source Voltage (Vdss): 120 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Supplier Device Package: SuperSO8 Vgs(th) (Max) @ Id: 3.6V @ 35µA Power Dissipation (Max): 3W (Ta), 94W (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 26A, 10V Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 62A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
auf Bestellung 4652 Stücke: Lieferzeit 10-14 Tag (e) |
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| ISC110N12NM6ATMA1 |
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Hersteller: Infineon Technologies
Description: TRENCH >=100V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 60 V
Gate Charge (Qg) (Max) @ Vgs: 19.3 nC @ 10 V
Drain to Source Voltage (Vdss): 120 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Supplier Device Package: SuperSO8
Vgs(th) (Max) @ Id: 3.6V @ 35µA
Power Dissipation (Max): 3W (Ta), 94W (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 26A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 62A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Description: TRENCH >=100V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 60 V
Gate Charge (Qg) (Max) @ Vgs: 19.3 nC @ 10 V
Drain to Source Voltage (Vdss): 120 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Supplier Device Package: SuperSO8
Vgs(th) (Max) @ Id: 3.6V @ 35µA
Power Dissipation (Max): 3W (Ta), 94W (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 26A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 62A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
auf Bestellung 4652 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 7+ | 2.9 EUR |
| 10+ | 1.94 EUR |
| 100+ | 1.32 EUR |
| 500+ | 1.06 EUR |
| 1000+ | 0.99 EUR |