ISC130N20NM6ATMA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta), 88A (Tc)
Rds On (Max) @ Id, Vgs: 11.7mOhm @ 50A, 15V
Power Dissipation (Max): 3W (Ta), 242W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 135µA
Supplier Device Package: PG-TSON-8-3
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 100 V
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Technische Details ISC130N20NM6ATMA1 Infineon Technologies
Description: MOSFET, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta), 88A (Tc), Rds On (Max) @ Id, Vgs: 11.7mOhm @ 50A, 15V, Power Dissipation (Max): 3W (Ta), 242W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 135µA, Supplier Device Package: PG-TSON-8-3, Drive Voltage (Max Rds On, Min Rds On): 10V, 15V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 100 V.
Weitere Produktangebote ISC130N20NM6ATMA1 nach Preis ab 3.94 EUR bis 7.2 EUR
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ISC130N20NM6ATMA1 | Infineon Technologies |
MOSFETs TRENCH >=100V |
auf Bestellung 3779 Stücke: Lieferzeit 10-14 Tag (e) |
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ISC130N20NM6ATMA1 | Infineon Technologies |
Description: MOSFET Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta), 88A (Tc) Rds On (Max) @ Id, Vgs: 11.7mOhm @ 50A, 15V Power Dissipation (Max): 3W (Ta), 242W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 135µA Supplier Device Package: PG-TSON-8-3 Drive Voltage (Max Rds On, Min Rds On): 10V, 15V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 100 V |
auf Bestellung 5450 Stücke: Lieferzeit 10-14 Tag (e) |
|
| ISC130N20NM6ATMA1 |
|
Hersteller: Infineon Technologies
MOSFETs TRENCH >=100V
MOSFETs TRENCH >=100V
auf Bestellung 3779 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 7.2 EUR |
| 10+ | 6.3 EUR |
| 100+ | 4.58 EUR |
| 500+ | 4.17 EUR |
| 5000+ | 3.94 EUR |
| ISC130N20NM6ATMA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta), 88A (Tc)
Rds On (Max) @ Id, Vgs: 11.7mOhm @ 50A, 15V
Power Dissipation (Max): 3W (Ta), 242W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 135µA
Supplier Device Package: PG-TSON-8-3
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 100 V
Description: MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta), 88A (Tc)
Rds On (Max) @ Id, Vgs: 11.7mOhm @ 50A, 15V
Power Dissipation (Max): 3W (Ta), 242W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 135µA
Supplier Device Package: PG-TSON-8-3
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 100 V
auf Bestellung 5450 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 7.2 EUR |
| 10+ | 6.3 EUR |
| 100+ | 4.56 EUR |
| 500+ | 4.55 EUR |