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ISC151N20NM6ATMA1

ISC151N20NM6ATMA1 Infineon Technologies

Infineon-ISC151N20NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d3286f5ca0f2c Hersteller: Infineon Technologies
Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.1A (Ta), 74A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 50A, 15V
Power Dissipation (Max): 3W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 105µA
Supplier Device Package: PG-TDSON-8 FL
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 100 V
auf Bestellung 4528 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+8.71 EUR
10+ 7.31 EUR
100+ 5.91 EUR
500+ 5.26 EUR
1000+ 4.5 EUR
2000+ 4.24 EUR
Mindestbestellmenge: 3
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Technische Details ISC151N20NM6ATMA1 Infineon Technologies

Description: TRENCH >=100V, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9.1A (Ta), 74A (Tc), Rds On (Max) @ Id, Vgs: 14mOhm @ 50A, 15V, Power Dissipation (Max): 3W (Ta), 200W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 105µA, Supplier Device Package: PG-TDSON-8 FL, Drive Voltage (Max Rds On, Min Rds On): 10V, 15V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 100 V.

Weitere Produktangebote ISC151N20NM6ATMA1 nach Preis ab 4.54 EUR bis 8.76 EUR

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Preis ohne MwSt
ISC151N20NM6ATMA1 ISC151N20NM6ATMA1 Hersteller : Infineon Technologies Infineon_ISC151N20NM6_DataSheet_v02_00_EN-3398079.pdf MOSFET TRENCH >=100V
auf Bestellung 695 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+8.76 EUR
10+ 7.36 EUR
25+ 6.93 EUR
100+ 5.95 EUR
250+ 5.61 EUR
500+ 5.28 EUR
1000+ 4.54 EUR
ISC151N20NM6ATMA1 Hersteller : Infineon Technologies infineon-isc151n20nm6-datasheet-v02_00-en.pdf N-Channel MOSFET
Produkt ist nicht verfügbar
ISC151N20NM6ATMA1 ISC151N20NM6ATMA1 Hersteller : Infineon Technologies Infineon-ISC151N20NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d3286f5ca0f2c Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.1A (Ta), 74A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 50A, 15V
Power Dissipation (Max): 3W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 105µA
Supplier Device Package: PG-TDSON-8 FL
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 100 V
Produkt ist nicht verfügbar