ISG0613N04NM6HATMA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: MOSFET 2N-CH 40V 42A 10VITFN
Packaging: Cut Tape (CT)
Package / Case: 10-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 167W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 299A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6200pF @ 20V
Rds On (Max) @ Id, Vgs: 0.88mOhm @ 50A, 10V
Gate Charge (Qg) (Max) @ Vgs: 104nC @ 10V
Vgs(th) (Max) @ Id: 2.8V @ 780µA
Supplier Device Package: PG-VITFN-10-1
auf Bestellung 2698 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 6.74 EUR |
| 10+ | 4.46 EUR |
| 100+ | 3.15 EUR |
| 500+ | 2.9 EUR |
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Technische Details ISG0613N04NM6HATMA1 Infineon Technologies
Description: MOSFET 2N-CH 40V 42A 10VITFN, Packaging: Tape & Reel (TR), Package / Case: 10-PowerVDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Half Bridge), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 3W (Ta), 167W (Tc), Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 299A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 6200pF @ 20V, Rds On (Max) @ Id, Vgs: 0.88mOhm @ 50A, 10V, Gate Charge (Qg) (Max) @ Vgs: 104nC @ 10V, Vgs(th) (Max) @ Id: 2.8V @ 780µA, Supplier Device Package: PG-VITFN-10-1.
Weitere Produktangebote ISG0613N04NM6HATMA1 nach Preis ab 2.73 EUR bis 7.08 EUR
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ISG0613N04NM6HATMA1 | Hersteller : Infineon Technologies |
MOSFETs TRENCH <= 40V |
auf Bestellung 82 Stücke: Lieferzeit 10-14 Tag (e) |
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ISG0613N04NM6HATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET 2N-CH 40V 42A 10VITFN Packaging: Tape & Reel (TR) Package / Case: 10-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3W (Ta), 167W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 299A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 6200pF @ 20V Rds On (Max) @ Id, Vgs: 0.88mOhm @ 50A, 10V Gate Charge (Qg) (Max) @ Vgs: 104nC @ 10V Vgs(th) (Max) @ Id: 2.8V @ 780µA Supplier Device Package: PG-VITFN-10-1 |
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