ISG0613N04NM6HSCATMA1 Infineon Technologies

Description: MOSFET 2N-CH 40V 42A 10WHITFN, Supplier Device Package: PG-WHITFN-10-1, Vgs(th) (Max) @ Id: 2.8V @ 780µA, Gate Charge (Qg) (Max) @ Vgs: 104nC @ 10V, Rds On (Max) @ Id, Vgs: 0.88mOhm @ 50A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 6200pF @ 20V, Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 299A (Tc), Drain to Source Voltage (Vdss): 40V, Power - Max: 3W (Ta), 167W (Tc), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Configuration: 2 N-Channel (Half Bridge), Mounting Type: Surface Mount, Package / Case: 10-PowerWDFN, Packaging: Tape & Reel (TR).