ISG0614N06NM5HSCATMA1 Infineon Technologies
auf Bestellung 2948 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 7.6 EUR |
| 10+ | 5.32 EUR |
| 100+ | 3.8 EUR |
| 500+ | 3.4 EUR |
| 1000+ | 3.29 EUR |
| 3000+ | 3.1 EUR |
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Technische Details ISG0614N06NM5HSCATMA1 Infineon Technologies
Description: MOSFET 2N-CH 60V 31A 10WHITFN, Packaging: Tape & Reel (TR), Package / Case: 10-PowerWDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Half Bridge), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 3W (Ta), 167W (Tc), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 233A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 6400pF @ 30V, Rds On (Max) @ Id, Vgs: 1.6mOhm @ 50A, 10V, Gate Charge (Qg) (Max) @ Vgs: 102nC @ 10V, Vgs(th) (Max) @ Id: 3.3V @ 86µA, Supplier Device Package: PG-WHITFN-10-1.
Weitere Produktangebote ISG0614N06NM5HSCATMA1 nach Preis ab 3.63 EUR bis 7.96 EUR
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ISG0614N06NM5HSCATMA1 | Hersteller : Infineon Technologies |
 Description: MOSFET 2N-CH 60V 31A 10WHITFNPackaging: Cut Tape (CT) Package / Case: 10-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3W (Ta), 167W (Tc) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 233A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 6400pF @ 30V Rds On (Max) @ Id, Vgs: 1.6mOhm @ 50A, 10V Gate Charge (Qg) (Max) @ Vgs: 102nC @ 10V Vgs(th) (Max) @ Id: 3.3V @ 86µA Supplier Device Package: PG-WHITFN-10-1 |
auf Bestellung 2825 Stücke: Lieferzeit 10-14 Tag (e) |
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| ISG0614N06NM5HSCATMA1 | Hersteller : Infineon Technologies |
SP005575184 |
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ISG0614N06NM5HSCATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET 2N-CH 60V 31A 10WHITFN Packaging: Tape & Reel (TR) Package / Case: 10-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3W (Ta), 167W (Tc) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 233A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 6400pF @ 30V Rds On (Max) @ Id, Vgs: 1.6mOhm @ 50A, 10V Gate Charge (Qg) (Max) @ Vgs: 102nC @ 10V Vgs(th) (Max) @ Id: 3.3V @ 86µA Supplier Device Package: PG-WHITFN-10-1 |
Produkt ist nicht verfügbar |