ISG0616N10NM5HSCATMA1 Infineon Technologies

Description: MOSFET 2N-CH 100V 19A 10WHITFN, Packaging: Tape & Reel (TR), Package / Case: 10-PowerWDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Half Bridge), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 3W (Ta), 167W (Tc), Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 139A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 4800pF @ 50V, Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V, Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V, Vgs(th) (Max) @ Id: 3.8V @ 85µA, Supplier Device Package: PG-WHITFN-10-1.