ISK036N03LM5AUSA1 Infineon Technologies

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Hersteller: Infineon Technologies
Trans MOSFET N-CH 30V 16.5A T/R

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Technische Details ISK036N03LM5AUSA1 Infineon Technologies

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Foto	Bezeichnung	Hersteller	Beschreibung	Verfügbarkeit entfalten einschränken alle	Preis ohne MwSt
	ISK036N03LM5AUSA1	Hersteller : Infineon Technologies	Description: TRENCH <= 40V Packaging: Tape & Reel (TR) Package / Case: 6-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16.5A (Ta), 81A (Tc) Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 39W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PG-VSON-6-1 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 15 V	Produkt ist nicht verfügbar	kaufen
	ISK036N03LM5AUSA1	Hersteller : Infineon Technologies	Description: TRENCH <= 40V Packaging: Cut Tape (CT) Package / Case: 6-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16.5A (Ta), 81A (Tc) Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 39W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PG-VSON-6-1 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 15 V	Produkt ist nicht verfügbar	kaufen
	ISK036N03LM5AUSA1	Hersteller : Infineon Technologies	MOSFET	Produkt ist nicht verfügbar	kaufen