| Anzahl | Preis |
|---|---|
| 2+ | 2.01 EUR |
| 10+ | 1.3 EUR |
| 100+ | 0.89 EUR |
| 500+ | 0.73 EUR |
| 1000+ | 0.65 EUR |
| 3000+ | 0.59 EUR |
| 6000+ | 0.55 EUR |
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Technische Details ISK036N03LM5AUSA1 Infineon Technologies
Description: TRENCH .
Weitere Produktangebote ISK036N03LM5AUSA1 nach Preis ab 0.66 EUR bis 2.2 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
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ISK036N03LM5AUSA1 | Infineon Technologies |
Description: TRENCH <= 40VSupplier Device Package: PG-VSON-6-1 Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 2.1W (Ta), 39W (Tc) Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 16.5A (Ta), 81A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-PowerVDFN Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±16V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
|
| ISK036N03LM5AUSA1 |
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Hersteller: Infineon Technologies
Description: TRENCH <= 40V
Supplier Device Package: PG-VSON-6-1
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.1W (Ta), 39W (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 16.5A (Ta), 81A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerVDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Description: TRENCH <= 40V
Supplier Device Package: PG-VSON-6-1
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.1W (Ta), 39W (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 16.5A (Ta), 81A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerVDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 8+ | 2.2 EUR |
| 13+ | 1.39 EUR |
| 100+ | 0.92 EUR |
| 500+ | 0.72 EUR |
| 1000+ | 0.66 EUR |



