ISL2100AABZ-T Renesas Electronics Corporation
Hersteller: Renesas Electronics Corporation
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
DigiKey Programmable: Not Verified
Current - Peak Output (Source, Sink): 2A, 2A
Logic Voltage - VIL, VIH: 3.7V, 7.4V
Gate Type: N-Channel MOSFET
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Independent
Rise / Fall Time (Typ): 10ns, 10ns
Supplier Device Package: 8-SOIC
High Side Voltage - Max (Bootstrap): 114 V
Input Type: Non-Inverting
Voltage - Supply: 9V ~ 14V
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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Technische Details ISL2100AABZ-T Renesas Electronics Corporation
Description: IC GATE DRVR HALF-BRIDGE 8SOIC, DigiKey Programmable: Not Verified, Current - Peak Output (Source, Sink): 2A, 2A, Logic Voltage - VIL, VIH: 3.7V, 7.4V, Gate Type: N-Channel MOSFET, Number of Drivers: 2, Driven Configuration: Half-Bridge, Channel Type: Independent, Rise / Fall Time (Typ): 10ns, 10ns, Supplier Device Package: 8-SOIC, High Side Voltage - Max (Bootstrap): 114 V, Input Type: Non-Inverting, Voltage - Supply: 9V ~ 14V, Operating Temperature: -40°C ~ 125°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).