ISL6613AEIBZ-T Renesas / Intersil
| Anzahl | Preis |
|---|---|
| 1+ | 6.16 EUR |
| 10+ | 5.54 EUR |
| 25+ | 5.24 EUR |
| 100+ | 4.54 EUR |
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Technische Details ISL6613AEIBZ-T Renesas / Intersil
Description: IC GATE DRVR HALF-BRIDGE 8SOIC, Input Type: Non-Inverting, Voltage - Supply: 10.8V ~ 13.2V, Operating Temperature: -40°C ~ 125°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad, Packaging: Tape & Reel (TR), Number of Drivers: 2, Driven Configuration: Half-Bridge, Channel Type: Synchronous, Rise / Fall Time (Typ): 26ns, 18ns, Supplier Device Package: 8-SOIC-EP, High Side Voltage - Max (Bootstrap): 36 V, DigiKey Programmable: Not Verified, Current - Peak Output (Source, Sink): 1.25A, 2A, Gate Type: N-Channel MOSFET.
Weitere Produktangebote ISL6613AEIBZ-T
| Foto | Bezeichnung | Hersteller | Beschreibung |
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ISL6613AEIBZ-T | Renesas Electronics Corporation |
 Description: IC GATE DRVR HALF-BRIDGE 8SOICInput Type: Non-Inverting Voltage - Supply: 10.8V ~ 13.2V Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Packaging: Tape & Reel (TR) Number of Drivers: 2 Driven Configuration: Half-Bridge Channel Type: Synchronous Rise / Fall Time (Typ): 26ns, 18ns Supplier Device Package: 8-SOIC-EP High Side Voltage - Max (Bootstrap): 36 V DigiKey Programmable: Not Verified Current - Peak Output (Source, Sink): 1.25A, 2A Gate Type: N-Channel MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| ISL6613AEIBZ-T |
|
Hersteller: Renesas Electronics Corporation
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Input Type: Non-Inverting
Voltage - Supply: 10.8V ~ 13.2V
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Tape & Reel (TR)
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Synchronous
Rise / Fall Time (Typ): 26ns, 18ns
Supplier Device Package: 8-SOIC-EP
High Side Voltage - Max (Bootstrap): 36 V
DigiKey Programmable: Not Verified
Current - Peak Output (Source, Sink): 1.25A, 2A
Gate Type: N-Channel MOSFET
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Input Type: Non-Inverting
Voltage - Supply: 10.8V ~ 13.2V
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Tape & Reel (TR)
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Synchronous
Rise / Fall Time (Typ): 26ns, 18ns
Supplier Device Package: 8-SOIC-EP
High Side Voltage - Max (Bootstrap): 36 V
DigiKey Programmable: Not Verified
Current - Peak Output (Source, Sink): 1.25A, 2A
Gate Type: N-Channel MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH