ISL6613AEIBZ-T Renesas
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 176+ | 3.16 EUR |
| 500+ | 2.89 EUR |
| 1000+ | 2.63 EUR |
| 10000+ | 2.38 EUR |
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Technische Details ISL6613AEIBZ-T Renesas
Description: IC GATE DRVR HALF-BRIDGE 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 125°C (TJ), Voltage - Supply: 10.8V ~ 13.2V, Input Type: Non-Inverting, High Side Voltage - Max (Bootstrap): 36 V, Supplier Device Package: 8-SOIC-EP, Rise / Fall Time (Typ): 26ns, 18ns, Channel Type: Synchronous, Driven Configuration: Half-Bridge, Number of Drivers: 2, Gate Type: N-Channel MOSFET, Current - Peak Output (Source, Sink): 1.25A, 2A, DigiKey Programmable: Not Verified.
Weitere Produktangebote ISL6613AEIBZ-T nach Preis ab 4.54 EUR bis 6.16 EUR
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| ISL6613AEIBZ-T | Hersteller : Renesas / Intersil |
 Gate Drivers SYNCH BUCK MSFT HV DRVR 8LD EP -- DISAB |
auf Bestellung 2405 Stücke: Lieferzeit 10-14 Tag (e) |
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ISL6613AEIBZ-T | Hersteller : Renesas Electronics Corporation |
Description: IC GATE DRVR HALF-BRIDGE 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Voltage - Supply: 10.8V ~ 13.2V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 36 V Supplier Device Package: 8-SOIC-EP Rise / Fall Time (Typ): 26ns, 18ns Channel Type: Synchronous Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: N-Channel MOSFET Current - Peak Output (Source, Sink): 1.25A, 2A DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |