ISL89163FBEAZ Renesas / Intersil
auf Bestellung 914 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 7.18 EUR |
| 10+ | 5.14 EUR |
| 100+ | 4.72 EUR |
| 250+ | 4.49 EUR |
| 500+ | 4.22 EUR |
| 980+ | 3.78 EUR |
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Produktbewertung abgeben
Technische Details ISL89163FBEAZ Renesas / Intersil
Category: MOSFET/IGBT drivers, Description: IC: driver; high-/low-side,MOSFET gate driver; SO8-EP; -6÷6A, Kind of package: tube, Output current: -6...6A, Type of integrated circuit: driver, Impulse rise time: 40ns, Pulse fall time: 40ns, Number of channels: 2, Kind of output: non-inverting, Protection: undervoltage UVP, Kind of integrated circuit: high-/low-side; MOSFET gate driver, Mounting: SMD, Operating temperature: -40...125°C, Case: SO8-EP, Supply voltage: 4.5...16V DC, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote ISL89163FBEAZ nach Preis ab 7 EUR bis 8.24 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||
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ISL89163FBEAZ | Hersteller : Renesas Electronics America Inc |
 Description: IC GATE DRVR LOW-SIDE 8SOIC |
auf Bestellung 40 Stücke: Lieferzeit 10-14 Tag (e) |
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| ISL89163FBEAZ | Hersteller : Intersil |
TUBE PACK, 8 LD SO/260 DEGREE CELSIUS/6A PEAK HIGH SPEED POWER MOSFET DRIVE Anzahl je Verpackung: 98 Stücke |
auf Bestellung 693 Stücke: Lieferzeit 7-21 Tag (e) |
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| ISL89163FBEAZ | Hersteller : RENESAS |
Category: MOSFET/IGBT drivers Description: IC: driver; high-/low-side,MOSFET gate driver; SO8-EP; -6÷6A Kind of package: tube Output current: -6...6A Type of integrated circuit: driver Impulse rise time: 40ns Pulse fall time: 40ns Number of channels: 2 Kind of output: non-inverting Protection: undervoltage UVP Kind of integrated circuit: high-/low-side; MOSFET gate driver Mounting: SMD Operating temperature: -40...125°C Case: SO8-EP Supply voltage: 4.5...16V DC Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| ISL89163FBEAZ | Hersteller : RENESAS |
Category: MOSFET/IGBT drivers Description: IC: driver; high-/low-side,MOSFET gate driver; SO8-EP; -6÷6A Kind of package: tube Output current: -6...6A Type of integrated circuit: driver Impulse rise time: 40ns Pulse fall time: 40ns Number of channels: 2 Kind of output: non-inverting Protection: undervoltage UVP Kind of integrated circuit: high-/low-side; MOSFET gate driver Mounting: SMD Operating temperature: -40...125°C Case: SO8-EP Supply voltage: 4.5...16V DC |
Produkt ist nicht verfügbar |