ISL89164FBEBZ Renesas Electronics America Inc
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3+ | 8.24 EUR |
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Technische Details ISL89164FBEBZ Renesas Electronics America Inc
Category: MOSFET/IGBT drivers, Description: IC: driver; high-/low-side,MOSFET gate driver; SO8-EP; -6÷6A, Kind of package: tube, Output current: -6...6A, Type of integrated circuit: driver, Impulse rise time: 40ns, Pulse fall time: 40ns, Number of channels: 2, Kind of output: non-inverting, Protection: undervoltage UVP, Kind of integrated circuit: high-/low-side; MOSFET gate driver, Mounting: SMD, Operating temperature: -40...125°C, Case: SO8-EP, Supply voltage: 4.5...16V DC, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote ISL89164FBEBZ nach Preis ab 5.72 EUR bis 11.44 EUR
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ISL89164FBEBZ | Hersteller : Renesas / Intersil |
 Gate Drivers 6A PEAK HI SPD PWR MSFT DRVR 8LD EP |
auf Bestellung 980 Stücke: Lieferzeit 14-28 Tag (e) |
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| ISL89164FBEBZ | Hersteller : Intersil |
EPSOIC 8/A°/High Speed, Dual Channel, 6A, Power MOSFET Driver with Enable I ISL89 Anzahl je Verpackung: 98 Stücke |
Produkt ist nicht verfügbar |
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| ISL89164FBEBZ | Hersteller : RENESAS |
Category: MOSFET/IGBT drivers Description: IC: driver; high-/low-side,MOSFET gate driver; SO8-EP; -6÷6A Kind of package: tube Output current: -6...6A Type of integrated circuit: driver Impulse rise time: 40ns Pulse fall time: 40ns Number of channels: 2 Kind of output: non-inverting Protection: undervoltage UVP Kind of integrated circuit: high-/low-side; MOSFET gate driver Mounting: SMD Operating temperature: -40...125°C Case: SO8-EP Supply voltage: 4.5...16V DC Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| ISL89164FBEBZ | Hersteller : RENESAS |
Category: MOSFET/IGBT drivers Description: IC: driver; high-/low-side,MOSFET gate driver; SO8-EP; -6÷6A Kind of package: tube Output current: -6...6A Type of integrated circuit: driver Impulse rise time: 40ns Pulse fall time: 40ns Number of channels: 2 Kind of output: non-inverting Protection: undervoltage UVP Kind of integrated circuit: high-/low-side; MOSFET gate driver Mounting: SMD Operating temperature: -40...125°C Case: SO8-EP Supply voltage: 4.5...16V DC |
Produkt ist nicht verfügbar |