ISL9R8120P2
Hersteller: auf Bestellung 980 Stücke:
Lieferzeit 21-28 Tag (e)
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Technische Details ISL9R8120P2
Description: DIODE GEN PURP 1.2KV 8A TO220-2L, Packaging: Tube, Package / Case: TO-220-2, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 300 ns, Technology: Avalanche, Capacitance @ Vr, F: 30pF @ 10V, 1MHz, Current - Average Rectified (Io): 8A, Supplier Device Package: TO-220-2L, Operating Temperature - Junction: -55°C ~ 150°C, Part Status: Obsolete, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 8 A, Current - Reverse Leakage @ Vr: 100 µA @ 1200 V.
Weitere Produktangebote ISL9R8120P2
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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ISL9R8120P2 | Hersteller : ON Semiconductor |
Rectifier Diode Switching 1.2KV 8A 44ns 2-Pin(2+Tab) TO-220AC Rail |
Produkt ist nicht verfügbar |
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ISL9R8120P2 | Hersteller : onsemi |
Description: DIODE GEN PURP 1.2KV 8A TO220-2L Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300 ns Technology: Avalanche Capacitance @ Vr, F: 30pF @ 10V, 1MHz Current - Average Rectified (Io): 8A Supplier Device Package: TO-220-2L Operating Temperature - Junction: -55°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 8 A Current - Reverse Leakage @ Vr: 100 µA @ 1200 V |
Produkt ist nicht verfügbar |