ISP13DP06NMSATMA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: MOSFET P-CH 60V SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Supplier Device Package: PG-SOT223
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
| Anzahl | Preis |
|---|---|
| 3000+ | 0.3 EUR |
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Technische Details ISP13DP06NMSATMA1 Infineon Technologies
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -60V; -2.8A; 5W; PG-SOT223, Mounting: SMD, Case: PG-SOT223, Polarisation: unipolar, Drain-source voltage: -60V, Drain current: -2.8A, Gate charge: 20.2nC, On-state resistance: 0.125Ω, Power dissipation: 5W, Kind of channel: enhancement, Type of transistor: P-MOSFET.
Weitere Produktangebote ISP13DP06NMSATMA1 nach Preis ab 0.33 EUR bis 1.47 EUR
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ISP13DP06NMSATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET P-CH 60V SOT223 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta) Supplier Device Package: PG-SOT223 Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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ISP13DP06NMSATMA1 | Hersteller : Infineon Technologies |
MOSFETs SMALL SIGNAL MOSFETS |
auf Bestellung 386 Stücke: Lieferzeit 10-14 Tag (e) |
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| ISP13DP06NMSATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -2.8A; 5W; PG-SOT223 Mounting: SMD Case: PG-SOT223 Polarisation: unipolar Drain-source voltage: -60V Drain current: -2.8A Gate charge: 20.2nC On-state resistance: 0.125Ω Power dissipation: 5W Kind of channel: enhancement Type of transistor: P-MOSFET |
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