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ISP20EP10LMXTSA1

ISP20EP10LMXTSA1 Infineon Technologies

Infineon-ISP20EP10LM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017be2dc2f104a50
Hersteller: Infineon Technologies
Description: SMALL SIGNAL MOSFETS PG-SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 650mA (Ta), 990mA (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 600mA, 10V
Power Dissipation (Max): 1.8W (Ta), 4.2W (Tc)
Vgs(th) (Max) @ Id: 2V @ 78µA
Supplier Device Package: PG-SOT223-4
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 50 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1000+0.24 EUR
2000+0.23 EUR
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details ISP20EP10LMXTSA1 Infineon Technologies

Description: SMALL SIGNAL MOSFETS PG-SOT223-4, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 650mA (Ta), 990mA (Tc), Rds On (Max) @ Id, Vgs: 2Ohm @ 600mA, 10V, Power Dissipation (Max): 1.8W (Ta), 4.2W (Tc), Vgs(th) (Max) @ Id: 2V @ 78µA, Supplier Device Package: PG-SOT223-4, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 50 V.

Weitere Produktangebote ISP20EP10LMXTSA1 nach Preis ab 0.19 EUR bis 0.55 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Preis
ISP20EP10LMXTSA1 ISP20EP10LMXTSA1 Infineon Technologies Infineon_ISP20EP10LM_DataSheet_v02_00_EN-2942435.pdf MOSFETs SMALL SIGNAL MOSFETS
auf Bestellung 2970 Stücke:
Lieferzeit 10-14 Tag (e)
6+0.48 EUR
10+0.29 EUR
100+0.23 EUR
500+0.22 EUR
1000+0.21 EUR
2000+0.2 EUR
5000+0.19 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
ISP20EP10LMXTSA1 ISP20EP10LMXTSA1 Infineon Technologies Infineon-ISP20EP10LM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017be2dc2f104a50 Description: SMALL SIGNAL MOSFETS PG-SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 650mA (Ta), 990mA (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 600mA, 10V
Power Dissipation (Max): 1.8W (Ta), 4.2W (Tc)
Vgs(th) (Max) @ Id: 2V @ 78µA
Supplier Device Package: PG-SOT223-4
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 50 V
auf Bestellung 2915 Stücke:
Lieferzeit 10-14 Tag (e)
33+0.55 EUR
48+0.37 EUR
54+0.33 EUR
100+0.28 EUR
250+0.26 EUR
500+0.25 EUR
Mindestbestellmenge: 33 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
ISP20EP10LMXTSA1 Infineon_ISP20EP10LM_DataSheet_v02_00_EN-2942435.pdf
ISP20EP10LMXTSA1
Hersteller: Infineon Technologies
MOSFETs SMALL SIGNAL MOSFETS
auf Bestellung 2970 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
6+0.48 EUR
10+0.29 EUR
100+0.23 EUR
500+0.22 EUR
1000+0.21 EUR
2000+0.2 EUR
5000+0.19 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
ISP20EP10LMXTSA1 Infineon-ISP20EP10LM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017be2dc2f104a50
ISP20EP10LMXTSA1
Hersteller: Infineon Technologies
Description: SMALL SIGNAL MOSFETS PG-SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 650mA (Ta), 990mA (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 600mA, 10V
Power Dissipation (Max): 1.8W (Ta), 4.2W (Tc)
Vgs(th) (Max) @ Id: 2V @ 78µA
Supplier Device Package: PG-SOT223-4
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 50 V
auf Bestellung 2915 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
33+0.55 EUR
48+0.37 EUR
54+0.33 EUR
100+0.28 EUR
250+0.26 EUR
500+0.25 EUR
Mindestbestellmenge: 33 Stücke
Im Einkaufswagen  Stück im Wert von  UAH