ISZ015N04NM7VATMA1 Infineon Technologies
auf Bestellung 3401 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 2.27 EUR |
| 10+ | 1.59 EUR |
| 100+ | 1.22 EUR |
| 500+ | 0.97 EUR |
| 1000+ | 0.86 EUR |
| 2500+ | 0.8 EUR |
| 5000+ | 0.76 EUR |
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Technische Details ISZ015N04NM7VATMA1 Infineon Technologies
Description: ISZ015N04NM7VATMA1, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 177A (Tc), Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 15V, Power Dissipation (Max): 3W (Ta), 94W (Tc), Vgs(th) (Max) @ Id: 3.15V @ 36µA, Supplier Device Package: PG-TSDSON-8 FL, Drive Voltage (Max Rds On, Min Rds On): 10V, 15V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 20 V.
Weitere Produktangebote ISZ015N04NM7VATMA1 nach Preis ab 0.89 EUR bis 2.83 EUR
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ISZ015N04NM7VATMA1 | Hersteller : Infineon Technologies |
 Description: ISZ015N04NM7VATMA1Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 177A (Tc) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 15V Power Dissipation (Max): 3W (Ta), 94W (Tc) Vgs(th) (Max) @ Id: 3.15V @ 36µA Supplier Device Package: PG-TSDSON-8 FL Drive Voltage (Max Rds On, Min Rds On): 10V, 15V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 20 V |
auf Bestellung 4950 Stücke: Lieferzeit 10-14 Tag (e) |
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ISZ015N04NM7VATMA1 | Hersteller : Infineon Technologies |
Description: ISZ015N04NM7VATMA1 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 177A (Tc) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 15V Power Dissipation (Max): 3W (Ta), 94W (Tc) Vgs(th) (Max) @ Id: 3.15V @ 36µA Supplier Device Package: PG-TSDSON-8 FL Drive Voltage (Max Rds On, Min Rds On): 10V, 15V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 20 V |
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