ISZ028N03LF2SATMA1 Infineon Technologies
Hersteller: Infineon TechnologiesMOSFETs Addresses a broad range of applications from low- to high-switching frequency
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 2.06 EUR |
| 10+ | 1.44 EUR |
| 100+ | 1.12 EUR |
| 500+ | 0.95 EUR |
| 1000+ | 0.77 EUR |
| 2500+ | 0.73 EUR |
| 5000+ | 0.69 EUR |
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Technische Details ISZ028N03LF2SATMA1 Infineon Technologies
Description: ISZ028N03LF2SATMA1, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 128A (Tc), Rds On (Max) @ Id, Vgs: 2.8mOhm @ 20A, 10V, Power Dissipation (Max): 3W (Ta), 83W (Tc), Vgs(th) (Max) @ Id: 2.35V @ 30µA, Supplier Device Package: PG-TSDSON-8 FL, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1780 pF @ 15 V.
Weitere Produktangebote ISZ028N03LF2SATMA1
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ISZ028N03LF2SATMA1 | Hersteller : Infineon Technologies |
Description: ISZ028N03LF2SATMA1 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 128A (Tc) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 20A, 10V Power Dissipation (Max): 3W (Ta), 83W (Tc) Vgs(th) (Max) @ Id: 2.35V @ 30µA Supplier Device Package: PG-TSDSON-8 FL Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1780 pF @ 15 V |
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ISZ028N03LF2SATMA1 | Hersteller : Infineon Technologies |
Description: ISZ028N03LF2SATMA1 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 128A (Tc) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 20A, 10V Power Dissipation (Max): 3W (Ta), 83W (Tc) Vgs(th) (Max) @ Id: 2.35V @ 30µA Supplier Device Package: PG-TSDSON-8 FL Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1780 pF @ 15 V |
Produkt ist nicht verfügbar |