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ISZ0702NLSATMA1

ISZ0702NLSATMA1 Infineon Technologies

Infineon_ISZ0702NLS_DataSheet_v02_00_EN-2507335.pdf Hersteller: Infineon Technologies
MOSFET TRENCH 40<-<100V
auf Bestellung 6520 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+2.04 EUR
10+ 1.67 EUR
100+ 1.3 EUR
500+ 1.1 EUR
1000+ 0.84 EUR
5000+ 0.8 EUR
10000+ 0.79 EUR
Mindestbestellmenge: 2
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Technische Details ISZ0702NLSATMA1 Infineon Technologies

Description: MOSFET N-CH 60V 17A/86A TSDSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 86A (Tc), Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V, Power Dissipation (Max): 2.5W (Ta), 65W (Tc), Vgs(th) (Max) @ Id: 2.3V @ 26µA, Supplier Device Package: PG-TSDSON-8-25, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 30 V.

Weitere Produktangebote ISZ0702NLSATMA1 nach Preis ab 0.85 EUR bis 2.06 EUR

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Preis ohne MwSt
ISZ0702NLSATMA1 ISZ0702NLSATMA1 Hersteller : Infineon Technologies Infineon-ISZ0702NLS-DataSheet-v02_00-EN.pdf?fileId=5546d46278d64ffd0178fd7e5c9c6e0d Description: MOSFET N-CH 60V 17A/86A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 86A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 65W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 26µA
Supplier Device Package: PG-TSDSON-8-25
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 30 V
auf Bestellung 8172 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
9+2.06 EUR
11+ 1.68 EUR
100+ 1.31 EUR
500+ 1.11 EUR
1000+ 0.9 EUR
2000+ 0.85 EUR
Mindestbestellmenge: 9
ISZ0702NLSATMA1 ISZ0702NLSATMA1 Hersteller : Infineon Technologies infineon-isz0702nls-datasheet-v02_00-en.pdf Trans MOSFET N-CH 60V 17A T/R
auf Bestellung 50000 Stücke:
Lieferzeit 14-21 Tag (e)
ISZ0702NLSATMA1 ISZ0702NLSATMA1 Hersteller : Infineon Technologies Infineon-ISZ0702NLS-DataSheet-v02_00-EN.pdf?fileId=5546d46278d64ffd0178fd7e5c9c6e0d Description: MOSFET N-CH 60V 17A/86A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 86A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 65W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 26µA
Supplier Device Package: PG-TSDSON-8-25
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 30 V
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