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ISZ173N15NM6ATMA1

ISZ173N15NM6ATMA1 Infineon Technologies

Infineon-ISZ173N15NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c90530b3a019077406e337014 Hersteller: Infineon Technologies
Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.9A (Ta), 48A (Tc)
Rds On (Max) @ Id, Vgs: 16.3mOhm @ 16A, 15V
Power Dissipation (Max): 2.5W (Ta), 94W (Tc)
Vgs(th) (Max) @ Id: 4V @ 35µA
Supplier Device Package: PG-TSDSON-8 FL
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 19.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 75 V
auf Bestellung 4906 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.14 EUR
10+3.08 EUR
100+2.35 EUR
500+1.91 EUR
1000+1.86 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details ISZ173N15NM6ATMA1 Infineon Technologies

Description: TRENCH >=100V, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7.9A (Ta), 48A (Tc), Rds On (Max) @ Id, Vgs: 16.3mOhm @ 16A, 15V, Power Dissipation (Max): 2.5W (Ta), 94W (Tc), Vgs(th) (Max) @ Id: 4V @ 35µA, Supplier Device Package: PG-TSDSON-8 FL, Drive Voltage (Max Rds On, Min Rds On): 8V, 15V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 19.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 75 V.

Weitere Produktangebote ISZ173N15NM6ATMA1 nach Preis ab 1.67 EUR bis 4.19 EUR

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ISZ173N15NM6ATMA1 ISZ173N15NM6ATMA1 Hersteller : Infineon Technologies Infineon_ISZ173N15NM6_DataSheet_v02_00_EN-3478200.pdf MOSFETs TRENCH >=100V
auf Bestellung 6834 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+4.19 EUR
10+3.12 EUR
100+2.48 EUR
500+2.08 EUR
1000+1.80 EUR
2500+1.69 EUR
5000+1.67 EUR
Im Einkaufswagen  Stück im Wert von  UAH
ISZ173N15NM6ATMA1 Hersteller : Infineon Technologies Infineon-ISZ173N15NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c90530b3a019077406e337014 ISZ173N15NM6ATMA1
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ISZ173N15NM6ATMA1 ISZ173N15NM6ATMA1 Hersteller : Infineon Technologies Infineon-ISZ173N15NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c90530b3a019077406e337014 Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.9A (Ta), 48A (Tc)
Rds On (Max) @ Id, Vgs: 16.3mOhm @ 16A, 15V
Power Dissipation (Max): 2.5W (Ta), 94W (Tc)
Vgs(th) (Max) @ Id: 4V @ 35µA
Supplier Device Package: PG-TSDSON-8 FL
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 19.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 75 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH