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ISZ330N12LM6ATMA1

ISZ330N12LM6ATMA1 Infineon Technologies

Infineon-ISZ330N12LM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee0185c27a471e5375 Hersteller: Infineon Technologies
Description: OPTIMOS 6 POWER-TRANSISTOR,120V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta), 24A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 9A, 10V
Power Dissipation (Max): 2.5W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 11µA
Supplier Device Package: PG-TSDSON-8 FL
Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 10.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 60 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5000+0.91 EUR
Mindestbestellmenge: 5000
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Technische Details ISZ330N12LM6ATMA1 Infineon Technologies

Description: OPTIMOS 6 POWER-TRANSISTOR,120V, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta), 24A (Tc), Rds On (Max) @ Id, Vgs: 33mOhm @ 9A, 10V, Power Dissipation (Max): 2.5W (Ta), 43W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 11µA, Supplier Device Package: PG-TSDSON-8 FL, Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 120 V, Gate Charge (Qg) (Max) @ Vgs: 10.1 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 60 V.

Weitere Produktangebote ISZ330N12LM6ATMA1 nach Preis ab 0.91 EUR bis 2.34 EUR

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Preis ohne MwSt
ISZ330N12LM6ATMA1 ISZ330N12LM6ATMA1 Hersteller : Infineon Technologies Infineon-ISZ330N12LM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee0185c27a471e5375 Description: OPTIMOS 6 POWER-TRANSISTOR,120V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta), 24A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 9A, 10V
Power Dissipation (Max): 2.5W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 11µA
Supplier Device Package: PG-TSDSON-8 FL
Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 10.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 60 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
8+2.32 EUR
10+ 1.9 EUR
100+ 1.48 EUR
500+ 1.25 EUR
1000+ 1.02 EUR
2000+ 0.96 EUR
Mindestbestellmenge: 8
ISZ330N12LM6ATMA1 ISZ330N12LM6ATMA1 Hersteller : Infineon Technologies Infineon-ISZ330N12LM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee0185c27a471e5375 MOSFET TRENCH >=100V
auf Bestellung 3410 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+2.34 EUR
10+ 1.92 EUR
100+ 1.49 EUR
500+ 1.26 EUR
1000+ 1.03 EUR
5000+ 0.91 EUR
Mindestbestellmenge: 2
ISZ330N12LM6ATMA1 Hersteller : Infineon Technologies infineon-isz330n12lm6-datasheet-v02_00-en.pdf Trans MOSFET N-CH 120V 5.7A 8-Pin TSDSON EP T/R
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