auf Bestellung 9597 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 3.08 EUR |
| 10+ | 2.24 EUR |
| 100+ | 1.74 EUR |
| 250+ | 1.72 EUR |
| 500+ | 1.44 EUR |
| 1000+ | 1.33 EUR |
| 5000+ | 1.28 EUR |
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Technische Details ISZ520N20NM6ATMA1 Infineon Technologies
Description: TRENCH >=100V, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 26A (Tc), Rds On (Max) @ Id, Vgs: 47.8mOhm @ 15A, 15V, Power Dissipation (Max): 2.5W (Ta), 88W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 31µA, Supplier Device Package: PG-TSDSON-8-34, Drive Voltage (Max Rds On, Min Rds On): 10V, 15V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 14.9 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 100 V.
Weitere Produktangebote ISZ520N20NM6ATMA1 nach Preis ab 1.39 EUR bis 3.08 EUR
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ISZ520N20NM6ATMA1 | Hersteller : Infineon Technologies |
 Description: TRENCH >=100VPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 26A (Tc) Rds On (Max) @ Id, Vgs: 47.8mOhm @ 15A, 15V Power Dissipation (Max): 2.5W (Ta), 88W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 31µA Supplier Device Package: PG-TSDSON-8-34 Drive Voltage (Max Rds On, Min Rds On): 10V, 15V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 14.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 100 V |
auf Bestellung 3535 Stücke: Lieferzeit 10-14 Tag (e) |
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ISZ520N20NM6ATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 200V 4.5A T/R |
Produkt ist nicht verfügbar |
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ISZ520N20NM6ATMA1 | Hersteller : Infineon Technologies |
Description: TRENCH >=100V Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 26A (Tc) Rds On (Max) @ Id, Vgs: 47.8mOhm @ 15A, 15V Power Dissipation (Max): 2.5W (Ta), 88W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 31µA Supplier Device Package: PG-TSDSON-8-34 Drive Voltage (Max Rds On, Min Rds On): 10V, 15V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 14.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 100 V |
Produkt ist nicht verfügbar |