auf Bestellung 2213 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 1.9 EUR |
| 10+ | 0.79 EUR |
| 100+ | 0.61 EUR |
| 5000+ | 0.51 EUR |
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Technische Details ISZ75DP15LMATMA1 Infineon Technologies
Description: TRENCH >=100V, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 1.13A (Ta), 5.1A (Tc), Rds On (Max) @ Id, Vgs: 750mOhm @ 4A, 10V, Power Dissipation (Max): 2.5W (Ta), 50W (Tc), Vgs(th) (Max) @ Id: 2V @ 543µA, Supplier Device Package: PG-TSDSON-8-26, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 30.4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 75 V.
Weitere Produktangebote ISZ75DP15LMATMA1 nach Preis ab 0.62 EUR bis 1.92 EUR
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ISZ75DP15LMATMA1 | Hersteller : Infineon Technologies |
 Description: TRENCH >=100VPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.13A (Ta), 5.1A (Tc) Rds On (Max) @ Id, Vgs: 750mOhm @ 4A, 10V Power Dissipation (Max): 2.5W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 2V @ 543µA Supplier Device Package: PG-TSDSON-8-26 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 30.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 75 V |
auf Bestellung 422 Stücke: Lieferzeit 10-14 Tag (e) |
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ISZ75DP15LMATMA1 | Hersteller : Infineon Technologies |
Description: TRENCH >=100V Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.13A (Ta), 5.1A (Tc) Rds On (Max) @ Id, Vgs: 750mOhm @ 4A, 10V Power Dissipation (Max): 2.5W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 2V @ 543µA Supplier Device Package: PG-TSDSON-8-26 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 30.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 75 V |
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