IXA12IF1200HB IXYS
Hersteller: IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; Planar; 1.2kV; 13A; 85W; TO247-3
Collector current: 13A
Case: TO247-3
Technology: Planar; Sonic FRD™; XPT™
Power dissipation: 85W
Kind of package: tube
Gate charge: 27nC
Mounting: THT
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Turn-on time: 110ns
Turn-off time: 350ns
Type of transistor: IGBT
Anzahl je Verpackung: 1 Stücke
auf Bestellung 268 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 12+ | 6.08 EUR |
| 20+ | 3.66 EUR |
| 21+ | 3.46 EUR |
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Technische Details IXA12IF1200HB IXYS
Description: IGBT 1200V 20A 85W TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 350 ns, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 10A, Supplier Device Package: TO-247AD, IGBT Type: PT, Switching Energy: 1.1mJ (on), 1.1mJ (off), Test Condition: 600V, 10A, 100Ohm, 15V, Gate Charge: 27 nC, Current - Collector (Ic) (Max): 20 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 85 W.
Weitere Produktangebote IXA12IF1200HB nach Preis ab 3.46 EUR bis 9.4 EUR
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IXA12IF1200HB | Hersteller : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; Planar; 1.2kV; 13A; 85W; TO247-3 Collector current: 13A Case: TO247-3 Technology: Planar; Sonic FRD™; XPT™ Power dissipation: 85W Kind of package: tube Gate charge: 27nC Mounting: THT Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Pulsed collector current: 30A Turn-on time: 110ns Turn-off time: 350ns Type of transistor: IGBT |
auf Bestellung 268 Stücke: Lieferzeit 14-21 Tag (e) |
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IXA12IF1200HB | Hersteller : IXYS |
Description: IGBT 1200V 20A 85W TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 350 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 10A Supplier Device Package: TO-247AD IGBT Type: PT Switching Energy: 1.1mJ (on), 1.1mJ (off) Test Condition: 600V, 10A, 100Ohm, 15V Gate Charge: 27 nC Current - Collector (Ic) (Max): 20 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 85 W |
auf Bestellung 438 Stücke: Lieferzeit 10-14 Tag (e) |
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IXA12IF1200HB | Hersteller : IXYS |
IGBT Transistors XPT IGBT Copack |
auf Bestellung 10 Stücke: Lieferzeit 10-14 Tag (e) |
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