IXA20PG1200DHGLB IXYS
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; IGBT half-bridge; Urmax: 1.2kV
Power dissipation: 130W
Case: SMPD-B
Electrical mounting: SMT
Type of semiconductor module: IGBT
Technology: ISOPLUS™; Sonic FRD™
Semiconductor structure: diode/transistor
Topology: IGBT half-bridge
Collector current: 23A
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Max. off-state voltage: 1.2kV
| Anzahl | Preis |
|---|---|
| 6+ | 12.13 EUR |
| 7+ | 10.64 EUR |
| 10+ | 10.37 EUR |
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Technische Details IXA20PG1200DHGLB IXYS
Category: IGBT modules, Description: Module: IGBT; diode/transistor; IGBT half-bridge; Urmax: 1.2kV, Power dissipation: 130W, Case: SMPD-B, Electrical mounting: SMT, Type of semiconductor module: IGBT, Technology: ISOPLUS™; Sonic FRD™, Semiconductor structure: diode/transistor, Topology: IGBT half-bridge, Collector current: 23A, Gate-emitter voltage: ±20V, Pulsed collector current: 45A, Max. off-state voltage: 1.2kV.
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IXA20PG1200DHGLB | Hersteller : IXYS |
IGBT Transistors XPT IGBT Phaseleg |
auf Bestellung 40 Stücke: Lieferzeit 10-14 Tag (e) |