auf Bestellung 269 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 21.68 EUR |
| 510+ | 21.26 EUR |
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Technische Details IXA27IF1200HJ IXYS
Description: IGBT MOD 1200V 43A ISOPLUS247, Packaging: Tube, Package / Case: ISOPLUS247™, Mounting Type: Through Hole, Input: Standard, Configuration: Single, Operating Temperature: -40°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A, NTC Thermistor: No, Supplier Device Package: ISOPLUS247™, IGBT Type: PT, Part Status: Active, Current - Collector (Ic) (Max): 43 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 150 W, Current - Collector Cutoff (Max): 100 µA.
Weitere Produktangebote IXA27IF1200HJ nach Preis ab 11.47 EUR bis 18.11 EUR
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| IXA27IF1200HJ | Hersteller : IXYS |
 Description: IGBT MOD 1200V 43A ISOPLUS247Packaging: Tube Package / Case: ISOPLUS247™ Mounting Type: Through Hole Input: Standard Configuration: Single Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A NTC Thermistor: No Supplier Device Package: ISOPLUS247™ IGBT Type: PT Part Status: Active Current - Collector (Ic) (Max): 43 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 150 W Current - Collector Cutoff (Max): 100 µA |
auf Bestellung 2130 Stücke: Lieferzeit 10-14 Tag (e) |
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IXA27IF1200HJ | Hersteller : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 27A; 150W; PLUS247™ Collector current: 27A Case: PLUS247™ Technology: GenX3™; Planar; Sonic FRD™; XPT™ Power dissipation: 150W Kind of package: tube Gate charge: 76nC Mounting: THT Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Pulsed collector current: 75A Turn-on time: 110ns Turn-off time: 350ns Type of transistor: IGBT Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IXA27IF1200HJ | Hersteller : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 27A; 150W; PLUS247™ Collector current: 27A Case: PLUS247™ Technology: GenX3™; Planar; Sonic FRD™; XPT™ Power dissipation: 150W Kind of package: tube Gate charge: 76nC Mounting: THT Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Pulsed collector current: 75A Turn-on time: 110ns Turn-off time: 350ns Type of transistor: IGBT |
Produkt ist nicht verfügbar |