IXA33IF1200HB IXYS
Hersteller: IXYSDescription: IGBT 1200V 58A 250W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 350 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
Supplier Device Package: TO-247AD
IGBT Type: PT
Switching Energy: 2.5mJ (on), 3mJ (off)
Test Condition: 600V, 25A, 39Ohm, 15V
Gate Charge: 76 nC
Part Status: Active
Current - Collector (Ic) (Max): 58 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 250 W
auf Bestellung 626 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 14.29 EUR |
| 30+ | 11.98 EUR |
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Technische Details IXA33IF1200HB IXYS
Description: IGBT 1200V 58A 250W TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 350 ns, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A, Supplier Device Package: TO-247AD, IGBT Type: PT, Switching Energy: 2.5mJ (on), 3mJ (off), Test Condition: 600V, 25A, 39Ohm, 15V, Gate Charge: 76 nC, Part Status: Active, Current - Collector (Ic) (Max): 58 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 250 W.
Weitere Produktangebote IXA33IF1200HB nach Preis ab 14.92 EUR bis 23.64 EUR
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Category: THT IGBT transistors Description: Transistor: IGBT; Sonic FRD™; 1.2kV; 34A; 250W; TO247-3 Collector current: 34A Case: TO247-3 Technology: Sonic FRD™; XPT™ Power dissipation: 250W Kind of package: tube Gate charge: 76nC Mounting: THT Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Pulsed collector current: 75A Turn-on time: 110ns Turn-off time: 350ns Type of transistor: IGBT Anzahl je Verpackung: 300 Stücke |
Produkt ist nicht verfügbar |
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IXA33IF1200HB | Hersteller : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; Sonic FRD™; 1.2kV; 34A; 250W; TO247-3 Collector current: 34A Case: TO247-3 Technology: Sonic FRD™; XPT™ Power dissipation: 250W Kind of package: tube Gate charge: 76nC Mounting: THT Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Pulsed collector current: 75A Turn-on time: 110ns Turn-off time: 350ns Type of transistor: IGBT |
Produkt ist nicht verfügbar |