auf Bestellung 191 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 19.25 EUR |
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Technische Details IXA45IF1200HB IXYS
Description: IGBT 1200V 78A 325W TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 350 ns, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 35A, Supplier Device Package: TO-247AD, IGBT Type: PT, Switching Energy: 3.8mJ (on), 4.1mJ (off), Test Condition: 600V, 35A, 27Ohm, 15V, Gate Charge: 106 nC, Part Status: Active, Current - Collector (Ic) (Max): 78 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 325 W.
Weitere Produktangebote IXA45IF1200HB nach Preis ab 14.26 EUR bis 19.96 EUR
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IXA45IF1200HB | Hersteller : IXYS |
 Description: IGBT 1200V 78A 325W TO247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 350 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 35A Supplier Device Package: TO-247AD IGBT Type: PT Switching Energy: 3.8mJ (on), 4.1mJ (off) Test Condition: 600V, 35A, 27Ohm, 15V Gate Charge: 106 nC Part Status: Active Current - Collector (Ic) (Max): 78 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 325 W |
auf Bestellung 172 Stücke: Lieferzeit 10-14 Tag (e) |
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IXA45IF1200HB | Hersteller : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 45A; 325W; TO247-3 Collector current: 45A Case: TO247-3 Technology: GenX3™; Planar; XPT™ Power dissipation: 325W Kind of package: tube Gate charge: 106nC Mounting: THT Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Pulsed collector current: 105A Turn-on time: 110ns Turn-off time: 350ns Type of transistor: IGBT Anzahl je Verpackung: 300 Stücke |
Produkt ist nicht verfügbar |
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IXA45IF1200HB | Hersteller : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 45A; 325W; TO247-3 Collector current: 45A Case: TO247-3 Technology: GenX3™; Planar; XPT™ Power dissipation: 325W Kind of package: tube Gate charge: 106nC Mounting: THT Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Pulsed collector current: 105A Turn-on time: 110ns Turn-off time: 350ns Type of transistor: IGBT |
Produkt ist nicht verfügbar |