IXA4I1200UC-TRL Littelfuse
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
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Technische Details IXA4I1200UC-TRL Littelfuse
Description: IGBT 1200V 9A 45W TO252AA, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 3A, Supplier Device Package: TO-252AA, IGBT Type: PT, Switching Energy: 400µJ (on), 300µJ (off), Test Condition: 600V, 3A, 330Ohm, 15V, Gate Charge: 12 nC, Current - Collector (Ic) (Max): 9 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 45 W.
Weitere Produktangebote IXA4I1200UC-TRL
| Foto | Bezeichnung | Hersteller | Beschreibung |
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Preis |
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| IXA4I1200UC-TRL | Hersteller : IXYS |
 Category: SMD IGBT transistorsDescription: Transistor: IGBT; XPT™; 1.2kV; 9A; 45W; TO252 Collector current: 9A Case: TO252 Technology: XPT™ Power dissipation: 45W Gate charge: 12nC Mounting: SMD Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Pulsed collector current: 9A Turn-on time: 70ns Turn-off time: 250ns Type of transistor: IGBT Anzahl je Verpackung: 2500 Stücke |
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IXA4I1200UC-TRL | Hersteller : IXYS |
Description: IGBT 1200V 9A 45W TO252AA Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 3A Supplier Device Package: TO-252AA IGBT Type: PT Switching Energy: 400µJ (on), 300µJ (off) Test Condition: 600V, 3A, 330Ohm, 15V Gate Charge: 12 nC Current - Collector (Ic) (Max): 9 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 45 W |
Produkt ist nicht verfügbar |
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| IXA4I1200UC-TRL | Hersteller : IXYS |
IGBT Transistors IGBT XPT-GENX3 |
Produkt ist nicht verfügbar |
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| IXA4I1200UC-TRL | Hersteller : IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; XPT™; 1.2kV; 9A; 45W; TO252 Collector current: 9A Case: TO252 Technology: XPT™ Power dissipation: 45W Gate charge: 12nC Mounting: SMD Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Pulsed collector current: 9A Turn-on time: 70ns Turn-off time: 250ns Type of transistor: IGBT |
Produkt ist nicht verfügbar |