IXA70I1200NA IXYS
Hersteller: IXYSCategory: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 65A; SOT227B
Collector current: 65A
Power dissipation: 350W
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Features of semiconductor devices: high voltage
Semiconductor structure: single transistor
Technology: XPT™
Type of semiconductor module: IGBT
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
auf Bestellung 12 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 40.18 EUR |
| 3+ | 40.17 EUR |
| 10+ | 39.54 EUR |
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Technische Details IXA70I1200NA IXYS
Category: IGBT modules, Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 65A; SOT227B, Collector current: 65A, Power dissipation: 350W, Case: SOT227B, Gate-emitter voltage: ±20V, Pulsed collector current: 150A, Features of semiconductor devices: high voltage, Semiconductor structure: single transistor, Technology: XPT™, Type of semiconductor module: IGBT, Max. off-state voltage: 1.2kV, Electrical mounting: screw, Mechanical mounting: screw, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote IXA70I1200NA nach Preis ab 39.54 EUR bis 61.51 EUR
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IXA70I1200NA | Hersteller : IXYS |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 65A; SOT227B Collector current: 65A Power dissipation: 350W Case: SOT227B Gate-emitter voltage: ±20V Pulsed collector current: 150A Features of semiconductor devices: high voltage Semiconductor structure: single transistor Technology: XPT™ Type of semiconductor module: IGBT Max. off-state voltage: 1.2kV Electrical mounting: screw Mechanical mounting: screw |
auf Bestellung 12 Stücke: Lieferzeit 14-21 Tag (e) |
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IXA70I1200NA | Hersteller : IXYS |
IGBT Modules XPT Single IGBT |
auf Bestellung 174 Stücke: Lieferzeit 10-14 Tag (e) |
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IXA70I1200NA | Hersteller : Littelfuse |
Trans IGBT Module N-CH 1200V 100A 350000mW |
Produkt ist nicht verfügbar |
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IXA70I1200NA | Hersteller : IXYS |
Description: IGBT MOD 1200V 100A 350W SOT227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis, Stud Mount Input: Standard Configuration: Single Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A NTC Thermistor: No Supplier Device Package: SOT-227B IGBT Type: PT Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 350 W Current - Collector Cutoff (Max): 100 µA |
Produkt ist nicht verfügbar |