IXBA16N170AHV IXYS
Hersteller: IXYSCategory: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 10A; 150W; TO263
Mounting: SMD
Power dissipation: 150W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 65nC
Technology: BiMOSFET™
Case: TO263
Collector-emitter voltage: 1.7kV
Gate-emitter voltage: ±20V
Collector current: 10A
Pulsed collector current: 40A
Turn-on time: 43ns
Turn-off time: 370ns
Type of transistor: IGBT
Anzahl je Verpackung: 1 Stücke
auf Bestellung 8 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3+ | 26.84 EUR |
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Technische Details IXBA16N170AHV IXYS
Description: REVERSE CONDUCTING IGBT, Packaging: Tube, Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 25 ns, Vce(on) (Max) @ Vge, Ic: 6V @ 15V, 10A, Supplier Device Package: TO-263HV, Td (on/off) @ 25°C: 15ns/250ns, Switching Energy: 2.5mJ (off), Test Condition: 1360V, 10A, 10Ohm, 15V, Gate Charge: 65 nC, Part Status: Active, Current - Collector (Ic) (Max): 16 A, Voltage - Collector Emitter Breakdown (Max): 1700 V, Current - Collector Pulsed (Icm): 40 A, Power - Max: 150 W.
Weitere Produktangebote IXBA16N170AHV nach Preis ab 26.84 EUR bis 48.45 EUR
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IXBA16N170AHV | Hersteller : IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 10A; 150W; TO263 Mounting: SMD Power dissipation: 150W Kind of package: tube Features of semiconductor devices: high voltage Gate charge: 65nC Technology: BiMOSFET™ Case: TO263 Collector-emitter voltage: 1.7kV Gate-emitter voltage: ±20V Collector current: 10A Pulsed collector current: 40A Turn-on time: 43ns Turn-off time: 370ns Type of transistor: IGBT |
auf Bestellung 8 Stücke: Lieferzeit 14-21 Tag (e) |
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IXBA16N170AHV | Hersteller : IXYS |
Description: REVERSE CONDUCTING IGBT Packaging: Tube Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 25 ns Vce(on) (Max) @ Vge, Ic: 6V @ 15V, 10A Supplier Device Package: TO-263HV Td (on/off) @ 25°C: 15ns/250ns Switching Energy: 2.5mJ (off) Test Condition: 1360V, 10A, 10Ohm, 15V Gate Charge: 65 nC Part Status: Active Current - Collector (Ic) (Max): 16 A Voltage - Collector Emitter Breakdown (Max): 1700 V Current - Collector Pulsed (Icm): 40 A Power - Max: 150 W |
auf Bestellung 25 Stücke: Lieferzeit 10-14 Tag (e) |
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IXBA16N170AHV | Hersteller : Littelfuse |
High Voltage, High Gain BIMOSFET |
Produkt ist nicht verfügbar |
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IXBA16N170AHV | Hersteller : IXYS |
MOSFET IGBT BIMOSFET-HIGH VOLT |
Produkt ist nicht verfügbar |