IXBF20N300 IXYS
Hersteller: IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3kV; 34A; 150W; ISOPLUS i4-pac™ x024c
Mounting: THT
Gate charge: 105nC
Turn-on time: 64ns
Turn-off time: 0.3µs
Power dissipation: 150W
Gate-emitter voltage: ±20V
Collector current: 34A
Pulsed collector current: 130A
Collector-emitter voltage: 3kV
Technology: BiMOSFET™
Case: ISOPLUS i4-pac™ x024c
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 73.87 EUR |
| 3+ | 67.57 EUR |
| 10+ | 65.06 EUR |
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Technische Details IXBF20N300 IXYS
Category: THT IGBT transistors, Description: Transistor: IGBT; BiMOSFET™; 3kV; 34A; 150W; ISOPLUS i4-pac™ x024c, Mounting: THT, Gate charge: 105nC, Turn-on time: 64ns, Turn-off time: 0.3µs, Power dissipation: 150W, Gate-emitter voltage: ±20V, Collector current: 34A, Pulsed collector current: 130A, Collector-emitter voltage: 3kV, Technology: BiMOSFET™, Case: ISOPLUS i4-pac™ x024c, Features of semiconductor devices: high voltage, Type of transistor: IGBT, Kind of package: tube, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote IXBF20N300 nach Preis ab 67.57 EUR bis 73.87 EUR
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IXBF20N300 | Hersteller : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; BiMOSFET™; 3kV; 34A; 150W; ISOPLUS i4-pac™ x024c Mounting: THT Gate charge: 105nC Turn-on time: 64ns Turn-off time: 0.3µs Power dissipation: 150W Gate-emitter voltage: ±20V Collector current: 34A Pulsed collector current: 130A Collector-emitter voltage: 3kV Technology: BiMOSFET™ Case: ISOPLUS i4-pac™ x024c Features of semiconductor devices: high voltage Type of transistor: IGBT Kind of package: tube |
auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) |
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IXBF20N300 | Hersteller : IXYS |
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