auf Bestellung 457 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 108.08 EUR |
| 10+ | 98.61 EUR |
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Technische Details IXBF20N360 IXYS
Description: IGBT 3600V 45A ISOPLUS I4-PAC, Packaging: Tube, Package / Case: i4-Pac™-5 (3 Leads), Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 1.7 µs, Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 20A, Supplier Device Package: ISOPLUS i4-PAC™, Td (on/off) @ 25°C: 18ns/238ns, Switching Energy: 15.5mJ (on), 4.3mJ (off), Test Condition: 1500V, 20A, 10Ohm, 15V, Gate Charge: 43 nC, Part Status: Active, Current - Collector (Ic) (Max): 45 A, Voltage - Collector Emitter Breakdown (Max): 3600 V, Current - Collector Pulsed (Icm): 220 A, Power - Max: 230 W.
Weitere Produktangebote IXBF20N360 nach Preis ab 85.28 EUR bis 110.49 EUR
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IXBF20N360 | Hersteller : IXYS |
Description: IGBT 3600V 45A ISOPLUS I4-PAC Packaging: Tube Package / Case: i4-Pac™-5 (3 Leads) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 1.7 µs Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 20A Supplier Device Package: ISOPLUS i4-PAC™ Td (on/off) @ 25°C: 18ns/238ns Switching Energy: 15.5mJ (on), 4.3mJ (off) Test Condition: 1500V, 20A, 10Ohm, 15V Gate Charge: 43 nC Part Status: Active Current - Collector (Ic) (Max): 45 A Voltage - Collector Emitter Breakdown (Max): 3600 V Current - Collector Pulsed (Icm): 220 A Power - Max: 230 W |
auf Bestellung 676 Stücke: Lieferzeit 10-14 Tag (e) |
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IXBF20N360 | Hersteller : IXYS |
 Category: THT IGBT transistorsDescription: Transistor: IGBT; BiMOSFET™; 3.6kV; 20A; 230W Gate charge: 110nC Power dissipation: 230W Collector current: 20A Gate-emitter voltage: ±20V Pulsed collector current: 220A Collector-emitter voltage: 3.6kV Technology: BiMOSFET™ Features of semiconductor devices: high voltage Type of transistor: IGBT Case: ISOPLUS i4-pac™ x024c Kind of package: tube Mounting: THT Anzahl je Verpackung: 300 Stücke |
Produkt ist nicht verfügbar |
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IXBF20N360 | Hersteller : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; BiMOSFET™; 3.6kV; 20A; 230W Gate charge: 110nC Power dissipation: 230W Collector current: 20A Gate-emitter voltage: ±20V Pulsed collector current: 220A Collector-emitter voltage: 3.6kV Technology: BiMOSFET™ Features of semiconductor devices: high voltage Type of transistor: IGBT Case: ISOPLUS i4-pac™ x024c Kind of package: tube Mounting: THT |
Produkt ist nicht verfügbar |