Technische Details IXBH16N170 Littelfuse
Category: THT IGBT transistors, Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 16A; 250W; TO247-3, Mounting: THT, Turn-on time: 220ns, Turn-off time: 940ns, Type of transistor: IGBT, Power dissipation: 250W, Pulsed collector current: 120A, Collector current: 16A, Gate-emitter voltage: ±20V, Kind of package: tube, Collector-emitter voltage: 1.7kV, Features of semiconductor devices: high voltage, Gate charge: 72nC, Technology: BiMOSFET™; FRED, Case: TO247-3, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote IXBH16N170
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IXBH16N170 | Hersteller : IXYS |
 Category: THT IGBT transistorsDescription: Transistor: IGBT; BiMOSFET™; 1.7kV; 16A; 250W; TO247-3 Mounting: THT Turn-on time: 220ns Turn-off time: 940ns Type of transistor: IGBT Power dissipation: 250W Pulsed collector current: 120A Collector current: 16A Gate-emitter voltage: ±20V Kind of package: tube Collector-emitter voltage: 1.7kV Features of semiconductor devices: high voltage Gate charge: 72nC Technology: BiMOSFET™; FRED Case: TO247-3 Anzahl je Verpackung: 1 Stücke |
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IXBH16N170 | Hersteller : IXYS |
Description: IGBT 1700V 40A TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 1.32 µs Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 16A Supplier Device Package: TO-247AD Gate Charge: 72 nC Part Status: Active Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 1700 V Current - Collector Pulsed (Icm): 120 A Power - Max: 250 W |
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IXBH16N170 | Hersteller : IXYS |
IGBT Transistors 1700V 25A |
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IXBH16N170 | Hersteller : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 16A; 250W; TO247-3 Mounting: THT Turn-on time: 220ns Turn-off time: 940ns Type of transistor: IGBT Power dissipation: 250W Pulsed collector current: 120A Collector current: 16A Gate-emitter voltage: ±20V Kind of package: tube Collector-emitter voltage: 1.7kV Features of semiconductor devices: high voltage Gate charge: 72nC Technology: BiMOSFET™; FRED Case: TO247-3 |
Produkt ist nicht verfügbar |