IXBH16N170 IXYS
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 16A; 250W; TO247-3
Mounting: THT
Collector current: 16A
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Power dissipation: 250W
Collector-emitter voltage: 1.7kV
Technology: BiMOSFET™; FRED
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Case: TO247-3
Kind of package: tube
Turn-on time: 220ns
Gate charge: 72nC
Turn-off time: 940ns
| Anzahl | Preis |
|---|---|
| 4+ | 18.7 EUR |
| 5+ | 15.9 EUR |
| 10+ | 14.39 EUR |
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Technische Details IXBH16N170 IXYS
Description: IGBT 1700V 40A TO-247AD, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 1.32 µs, Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 16A, Supplier Device Package: TO-247AD, Gate Charge: 72 nC, Part Status: Active, Current - Collector (Ic) (Max): 40 A, Voltage - Collector Emitter Breakdown (Max): 1700 V, Current - Collector Pulsed (Icm): 120 A, Power - Max: 250 W.
Weitere Produktangebote IXBH16N170 nach Preis ab 14.88 EUR bis 32.21 EUR
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IXBH16N170 | Hersteller : IXYS |
Description: IGBT 1700V 40A TO-247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 1.32 µs Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 16A Supplier Device Package: TO-247AD Gate Charge: 72 nC Part Status: Active Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 1700 V Current - Collector Pulsed (Icm): 120 A Power - Max: 250 W |
auf Bestellung 358 Stücke: Lieferzeit 10-14 Tag (e) |
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IXBH16N170 | Hersteller : IXYS |
IGBTs 1700V 25A |
auf Bestellung 12 Stücke: Lieferzeit 10-14 Tag (e) |
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