auf Bestellung 13 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 42.2 EUR |
| 10+ | 37.15 EUR |
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Technische Details IXBH16N170A IXYS
Description: IGBT 1700V 16A 150W TO247AD, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 360 ns, Vce(on) (Max) @ Vge, Ic: 6V @ 15V, 10A, Supplier Device Package: TO-247AD, Td (on/off) @ 25°C: 15ns/160ns, Switching Energy: 1.2mJ (off), Test Condition: 1360V, 10A, 10Ohm, 15V, Gate Charge: 65 nC, Part Status: Active, Current - Collector (Ic) (Max): 16 A, Voltage - Collector Emitter Breakdown (Max): 1700 V, Current - Collector Pulsed (Icm): 40 A, Power - Max: 150 W.
Weitere Produktangebote IXBH16N170A
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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IXBH16N170A | Hersteller : Littelfuse |
 Trans IGBT Chip N-CH 1700V 16A 190000mW 3-Pin(3+Tab) TO-247AD |
Produkt ist nicht verfügbar |
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IXBH16N170A | Hersteller : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 10A; 150W; TO247-3 Mounting: THT Turn-on time: 43ns Turn-off time: 370ns Type of transistor: IGBT Power dissipation: 150W Pulsed collector current: 40A Collector current: 10A Gate-emitter voltage: ±20V Kind of package: tube Collector-emitter voltage: 1.7kV Features of semiconductor devices: high voltage Gate charge: 65nC Technology: BiMOSFET™ Case: TO247-3 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IXBH16N170A | Hersteller : IXYS |
Description: IGBT 1700V 16A 150W TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 360 ns Vce(on) (Max) @ Vge, Ic: 6V @ 15V, 10A Supplier Device Package: TO-247AD Td (on/off) @ 25°C: 15ns/160ns Switching Energy: 1.2mJ (off) Test Condition: 1360V, 10A, 10Ohm, 15V Gate Charge: 65 nC Part Status: Active Current - Collector (Ic) (Max): 16 A Voltage - Collector Emitter Breakdown (Max): 1700 V Current - Collector Pulsed (Icm): 40 A Power - Max: 150 W |
Produkt ist nicht verfügbar |
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IXBH16N170A | Hersteller : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 10A; 150W; TO247-3 Mounting: THT Turn-on time: 43ns Turn-off time: 370ns Type of transistor: IGBT Power dissipation: 150W Pulsed collector current: 40A Collector current: 10A Gate-emitter voltage: ±20V Kind of package: tube Collector-emitter voltage: 1.7kV Features of semiconductor devices: high voltage Gate charge: 65nC Technology: BiMOSFET™ Case: TO247-3 |
Produkt ist nicht verfügbar |