auf Bestellung 344 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 71.21 EUR |
| 10+ | 63.47 EUR |
| 30+ | 59.68 EUR |
| 60+ | 57.68 EUR |
| 120+ | 55.69 EUR |
| 270+ | 53.7 EUR |
| 510+ | 51.94 EUR |
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Technische Details IXBH20N300 IXYS
Category: THT IGBT transistors, Description: Transistor: IGBT; BiMOSFET™; 3kV; 50A; 250W; TO247-3, Mounting: THT, Power dissipation: 250W, Kind of package: tube, Features of semiconductor devices: high voltage, Gate charge: 105nC, Technology: BiMOSFET™, Case: TO247-3, Collector-emitter voltage: 3kV, Gate-emitter voltage: ±20V, Collector current: 50A, Pulsed collector current: 130A, Turn-on time: 64ns, Turn-off time: 0.3µs, Type of transistor: IGBT, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote IXBH20N300
| Foto | Bezeichnung | Hersteller | Beschreibung |
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IXBH20N300 | Hersteller : IXYS |
 Category: THT IGBT transistorsDescription: Transistor: IGBT; BiMOSFET™; 3kV; 50A; 250W; TO247-3 Mounting: THT Power dissipation: 250W Kind of package: tube Features of semiconductor devices: high voltage Gate charge: 105nC Technology: BiMOSFET™ Case: TO247-3 Collector-emitter voltage: 3kV Gate-emitter voltage: ±20V Collector current: 50A Pulsed collector current: 130A Turn-on time: 64ns Turn-off time: 0.3µs Type of transistor: IGBT Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IXBH20N300 | Hersteller : Littelfuse |
Trans IGBT Chip N-CH 3000V 50A 250000mW 3-Pin(3+Tab) TO-247 |
Produkt ist nicht verfügbar |
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IXBH20N300 | Hersteller : IXYS |
Description: IGBT 3000V 50A TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 1.35 µs Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 20A Supplier Device Package: TO-247AD Gate Charge: 105 nC Part Status: Active Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 3000 V Current - Collector Pulsed (Icm): 140 A Power - Max: 250 W |
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IXBH20N300 | Hersteller : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; BiMOSFET™; 3kV; 50A; 250W; TO247-3 Mounting: THT Power dissipation: 250W Kind of package: tube Features of semiconductor devices: high voltage Gate charge: 105nC Technology: BiMOSFET™ Case: TO247-3 Collector-emitter voltage: 3kV Gate-emitter voltage: ±20V Collector current: 50A Pulsed collector current: 130A Turn-on time: 64ns Turn-off time: 0.3µs Type of transistor: IGBT |
Produkt ist nicht verfügbar |