IXBH42N170A IXYS
Hersteller: IXYSDescription: IGBT 1700V 42A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 330 ns
Vce(on) (Max) @ Vge, Ic: 6V @ 15V, 21A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 19ns/200ns
Switching Energy: 3.43mJ (on), 430µJ (off)
Test Condition: 850V, 21A, 1Ohm, 15V
Gate Charge: 188 nC
Current - Collector (Ic) (Max): 42 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 265 A
Power - Max: 357 W
auf Bestellung 141 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 34.18 EUR |
| 30+ | 24.53 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IXBH42N170A IXYS
Description: IGBT 1700V 42A TO-247AD, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 330 ns, Vce(on) (Max) @ Vge, Ic: 6V @ 15V, 21A, Supplier Device Package: TO-247AD, Td (on/off) @ 25°C: 19ns/200ns, Switching Energy: 3.43mJ (on), 430µJ (off), Test Condition: 850V, 21A, 1Ohm, 15V, Gate Charge: 188 nC, Current - Collector (Ic) (Max): 42 A, Voltage - Collector Emitter Breakdown (Max): 1700 V, Current - Collector Pulsed (Icm): 265 A, Power - Max: 357 W.
Weitere Produktangebote IXBH42N170A nach Preis ab 42.68 EUR bis 56.53 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
 |
IXBH42N170A | Hersteller : IXYS |
IGBTs BIMOSET 42A 1700V |
auf Bestellung 305 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||
 |
IXBH42N170A | Hersteller : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 21A; 357W; TO247-3 Case: TO247-3 Mounting: THT Kind of package: tube Gate charge: 188nC Turn-on time: 33ns Turn-off time: 308ns Power dissipation: 357W Collector current: 21A Pulsed collector current: 265A Gate-emitter voltage: ±20V Collector-emitter voltage: 1.7kV Technology: BiMOSFET™ Features of semiconductor devices: high voltage Type of transistor: IGBT |
Produkt ist nicht verfügbar |