IXBK55N300 IXYS
Hersteller: IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3kV; 55A; 625W; TO264
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Mounting: THT
Case: TO264
Gate charge: 335nC
Turn-off time: 475ns
Turn-on time: 637ns
Gate-emitter voltage: ±20V
Collector current: 55A
Pulsed collector current: 600A
Power dissipation: 625W
Collector-emitter voltage: 3kV
Kind of package: tube
Technology: BiMOSFET™
Anzahl je Verpackung: 1 Stücke
auf Bestellung 15 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 114.17 EUR |
| 10+ | 111.54 EUR |
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Technische Details IXBK55N300 IXYS
Category: THT IGBT transistors, Description: Transistor: IGBT; BiMOSFET™; 3kV; 55A; 625W; TO264, Features of semiconductor devices: high voltage, Type of transistor: IGBT, Mounting: THT, Case: TO264, Gate charge: 335nC, Turn-off time: 475ns, Turn-on time: 637ns, Gate-emitter voltage: ±20V, Collector current: 55A, Pulsed collector current: 600A, Power dissipation: 625W, Collector-emitter voltage: 3kV, Kind of package: tube, Technology: BiMOSFET™, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote IXBK55N300 nach Preis ab 111.54 EUR bis 169.49 EUR
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IXBK55N300 | Hersteller : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; BiMOSFET™; 3kV; 55A; 625W; TO264 Features of semiconductor devices: high voltage Type of transistor: IGBT Mounting: THT Case: TO264 Gate charge: 335nC Turn-off time: 475ns Turn-on time: 637ns Gate-emitter voltage: ±20V Collector current: 55A Pulsed collector current: 600A Power dissipation: 625W Collector-emitter voltage: 3kV Kind of package: tube Technology: BiMOSFET™ |
auf Bestellung 15 Stücke: Lieferzeit 14-21 Tag (e) |
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IXBK55N300 | Hersteller : IXYS |
Description: IGBT 3000V 130A TO-264AA Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 1.9 µs Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 55A Supplier Device Package: TO-264AA Gate Charge: 335 nC Current - Collector (Ic) (Max): 130 A Voltage - Collector Emitter Breakdown (Max): 3000 V Current - Collector Pulsed (Icm): 600 A Power - Max: 625 W |
auf Bestellung 408 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXBK55N300 | Hersteller : Littelfuse |
Trans IGBT Chip N-CH 3000V 130A 625000mW 3-Pin(3+Tab) TO-264 |
Produkt ist nicht verfügbar |
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IXBK55N300 | Hersteller : IXYS |
IGBTs TO264 3KV 55A BIMOSFET |
Produkt ist nicht verfügbar |