IXBN42N170A IXYS
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.7kV; Ic: 21A; SOT227B
Technology: BiMOSFET™
Collector current: 21A
Power dissipation: 313W
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 265A
Semiconductor structure: single transistor
Max. off-state voltage: 1.7kV
Features of semiconductor devices: high voltage
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Anzahl je Verpackung: 1 Stücke
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.7kV; Ic: 21A; SOT227B
Technology: BiMOSFET™
Collector current: 21A
Power dissipation: 313W
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 265A
Semiconductor structure: single transistor
Max. off-state voltage: 1.7kV
Features of semiconductor devices: high voltage
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Anzahl je Verpackung: 1 Stücke
auf Bestellung 8 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2+ | 43.39 EUR |
10+ | 42.8 EUR |
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Produktbewertung abgeben
Technische Details IXBN42N170A IXYS
Description: IGBT MOD 1700V 42A 312W SOT227B, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Input: Standard, Configuration: Single, Operating Temperature: -55°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 6V @ 15V, 21A, NTC Thermistor: No, Supplier Device Package: SOT-227B, Current - Collector (Ic) (Max): 42 A, Voltage - Collector Emitter Breakdown (Max): 1700 V, Power - Max: 312 W, Current - Collector Cutoff (Max): 50 µA, Input Capacitance (Cies) @ Vce: 3.5 nF @ 25 V.
Weitere Produktangebote IXBN42N170A nach Preis ab 43.39 EUR bis 72.86 EUR
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IXBN42N170A | Hersteller : IXYS |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.7kV; Ic: 21A; SOT227B Technology: BiMOSFET™ Collector current: 21A Power dissipation: 313W Case: SOT227B Gate-emitter voltage: ±20V Pulsed collector current: 265A Semiconductor structure: single transistor Max. off-state voltage: 1.7kV Features of semiconductor devices: high voltage Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT |
auf Bestellung 8 Stücke: Lieferzeit 14-21 Tag (e) |
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IXBN42N170A | Hersteller : IXYS | IGBT Transistors 42 Amps 1700V 6.0 V Rds |
auf Bestellung 192 Stücke: Lieferzeit 10-14 Tag (e) |
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IXBN42N170A | Hersteller : IXYS |
Description: IGBT MOD 1700V 42A 312W SOT227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -55°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 6V @ 15V, 21A NTC Thermistor: No Supplier Device Package: SOT-227B Current - Collector (Ic) (Max): 42 A Voltage - Collector Emitter Breakdown (Max): 1700 V Power - Max: 312 W Current - Collector Cutoff (Max): 50 µA Input Capacitance (Cies) @ Vce: 3.5 nF @ 25 V |
Produkt ist nicht verfügbar |