IXBT16N170AHV IXYS
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 10A; 150W; TO268HV
Technology: BiMOSFET™
Mounting: SMD
Case: TO268HV
Collector current: 10A
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Power dissipation: 150W
Collector-emitter voltage: 1.7kV
Kind of package: tube
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Turn-on time: 43ns
Gate charge: 65nC
Turn-off time: 370ns
| Anzahl | Preis |
|---|---|
| 5+ | 15.67 EUR |
| 10+ | 14.07 EUR |
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Technische Details IXBT16N170AHV IXYS
Description: IGBT 1700V 16A TO-268HV, Power - Max: 150 W, Current - Collector Pulsed (Icm): 40 A, Voltage - Collector Emitter Breakdown (Max): 1700 V, Current - Collector (Ic) (Max): 16 A, Gate Charge: 65 nC, Test Condition: 1360V, 10A, 10Ohm, 15V, Switching Energy: 2.5mJ (off), Td (on/off) @ 25°C: 15ns/250ns, Supplier Device Package: TO-268HV (IXBT), Vce(on) (Max) @ Vge, Ic: 6V @ 15V, 10A, Reverse Recovery Time (trr): 25 ns, Input Type: Standard, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Packaging: Tube.
Weitere Produktangebote IXBT16N170AHV
| Foto | Bezeichnung | Hersteller | Beschreibung |
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IXBT16N170AHV | Hersteller : IXYS |
Description: IGBT 1700V 16A TO-268HV Power - Max: 150 W Current - Collector Pulsed (Icm): 40 A Voltage - Collector Emitter Breakdown (Max): 1700 V Current - Collector (Ic) (Max): 16 A Gate Charge: 65 nC Test Condition: 1360V, 10A, 10Ohm, 15V Switching Energy: 2.5mJ (off) Td (on/off) @ 25°C: 15ns/250ns Supplier Device Package: TO-268HV (IXBT) Vce(on) (Max) @ Vge, Ic: 6V @ 15V, 10A Reverse Recovery Time (trr): 25 ns Input Type: Standard Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Packaging: Tube |
Produkt ist nicht verfügbar |
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IXBT16N170AHV | Hersteller : IXYS |
IGBT Transistors IGBT BIMOSFET-HIGH VOLT |
Produkt ist nicht verfügbar |