IXBT24N170 IXYS

Category: SMD IGBT transistors, Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 24A; 250W; TO268, Technology: BiMOSFET™, Mounting: SMD, Case: TO268, Kind of package: tube, Turn-on time: 190ns, Turn-off time: 1285ns, Gate-emitter voltage: ±20V, Collector current: 24A, Collector-emitter voltage: 1.7kV, Power dissipation: 250W, Gate charge: 0.14µC, Features of semiconductor devices: high voltage, Pulsed collector current: 230A, Type of transistor: IGBT.