IXBT2N250 IXYS
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 2.5kV; 2A; 32W; TO268
Mounting: SMD
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Gate charge: 10.6nC
Turn-on time: 310ns
Turn-off time: 252ns
Power dissipation: 32W
Collector current: 2A
Pulsed collector current: 13A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 2.5kV
Kind of package: tube
Technology: BiMOSFET™
Case: TO268
| Anzahl | Preis |
|---|---|
| 3+ | 27.83 EUR |
| 10+ | 25.11 EUR |
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Technische Details IXBT2N250 IXYS
Description: IGBT 2500V 5A TO-268AA, Packaging: Tube, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 920 ns, Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 2A, Supplier Device Package: TO-268AA, Gate Charge: 10.6 nC, Part Status: Active, Current - Collector (Ic) (Max): 5 A, Voltage - Collector Emitter Breakdown (Max): 2500 V, Current - Collector Pulsed (Icm): 13 A, Power - Max: 32 W.
Weitere Produktangebote IXBT2N250 nach Preis ab 21.21 EUR bis 36.03 EUR
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IXBT2N250 | Hersteller : IXYS |
IGBT Transistors IGBT BIMSFT-VERYHIVOLT |
auf Bestellung 493 Stücke: Lieferzeit 10-14 Tag (e) |
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IXBT2N250 | Hersteller : IXYS |
Description: IGBT 2500V 5A TO-268AA Packaging: Tube Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 920 ns Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 2A Supplier Device Package: TO-268AA Gate Charge: 10.6 nC Part Status: Active Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 2500 V Current - Collector Pulsed (Icm): 13 A Power - Max: 32 W |
auf Bestellung 173 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXBT2N250 |
BIMOSFET IGBT 2500V, Ic(max)=5A, TO-268AA (D3Pak) Група товару: Транзистори Од. вим: шт |
Produkt ist nicht verfügbar |