auf Bestellung 493 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 34.99 EUR |
| 10+ | 32.38 EUR |
| 30+ | 28.92 EUR |
| 60+ | 28.09 EUR |
| 120+ | 27.19 EUR |
| 510+ | 24.69 EUR |
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Technische Details IXBT2N250 IXYS
Description: IGBT 2500V 5A TO-268AA, Packaging: Tube, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 920 ns, Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 2A, Supplier Device Package: TO-268AA, Gate Charge: 10.6 nC, Part Status: Active, Current - Collector (Ic) (Max): 5 A, Voltage - Collector Emitter Breakdown (Max): 2500 V, Current - Collector Pulsed (Icm): 13 A, Power - Max: 32 W.
Weitere Produktangebote IXBT2N250 nach Preis ab 20.45 EUR bis 71.5 EUR
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IXBT2N250 | Hersteller : IXYS |
 Description: IGBT 2500V 5A TO-268AAPackaging: Tube Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 920 ns Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 2A Supplier Device Package: TO-268AA Gate Charge: 10.6 nC Part Status: Active Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 2500 V Current - Collector Pulsed (Icm): 13 A Power - Max: 32 W |
auf Bestellung 173 Stücke: Lieferzeit 10-14 Tag (e) |
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IXBT2N250 | Hersteller : IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; BiMOSFET™; 2.5kV; 2A; 32W; TO268 Mounting: SMD Features of semiconductor devices: high voltage Type of transistor: IGBT Gate charge: 10.6nC Turn-off time: 252ns Turn-on time: 310ns Power dissipation: 32W Collector current: 2A Pulsed collector current: 13A Gate-emitter voltage: ±20V Collector-emitter voltage: 2.5kV Kind of package: tube Technology: BiMOSFET™ Case: TO268 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1 Stücke: Lieferzeit 7-14 Tag (e) |
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IXBT2N250 | Hersteller : IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; BiMOSFET™; 2.5kV; 2A; 32W; TO268 Mounting: SMD Features of semiconductor devices: high voltage Type of transistor: IGBT Gate charge: 10.6nC Turn-off time: 252ns Turn-on time: 310ns Power dissipation: 32W Collector current: 2A Pulsed collector current: 13A Gate-emitter voltage: ±20V Collector-emitter voltage: 2.5kV Kind of package: tube Technology: BiMOSFET™ Case: TO268 |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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IXBT2N250 | Hersteller : Littelfuse |
Trans IGBT Chip N-CH 2500V 5A 32000mW 3-Pin(2+Tab) TO-268 |
Produkt ist nicht verfügbar |