auf Bestellung 12 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 21.26 EUR |
| 10+ | 19.22 EUR |
| 30+ | 18.34 EUR |
| 120+ | 15.91 EUR |
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Technische Details IXBT6N170 IXYS
Description: IGBT 1700V 12A TO268AA, Packaging: Tube, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 1.08 µs, Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 6A, Supplier Device Package: TO-268AA, Gate Charge: 17 nC, Current - Collector (Ic) (Max): 12 A, Voltage - Collector Emitter Breakdown (Max): 1700 V, Current - Collector Pulsed (Icm): 36 A, Power - Max: 75 W.
Weitere Produktangebote IXBT6N170
| Foto | Bezeichnung | Hersteller | Beschreibung |
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IXBT6N170 | Hersteller : IXYS |
 Category: SMD IGBT transistorsDescription: Transistor: IGBT; BiMOSFET™; 1.7kV; 6A; 75W; D3PAK Mounting: SMD Gate-emitter voltage: ±20V Collector current: 6A Collector-emitter voltage: 1.7kV Power dissipation: 75W Gate charge: 17nC Technology: BiMOSFET™; FRED Features of semiconductor devices: high voltage Pulsed collector current: 36A Type of transistor: IGBT Turn-on time: 104ns Kind of package: tube Case: D3PAK Turn-off time: 700ns Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IXBT6N170 | Hersteller : IXYS |
Description: IGBT 1700V 12A TO268AA Packaging: Tube Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 1.08 µs Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 6A Supplier Device Package: TO-268AA Gate Charge: 17 nC Current - Collector (Ic) (Max): 12 A Voltage - Collector Emitter Breakdown (Max): 1700 V Current - Collector Pulsed (Icm): 36 A Power - Max: 75 W |
Produkt ist nicht verfügbar |
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IXBT6N170 | Hersteller : IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 6A; 75W; D3PAK Mounting: SMD Gate-emitter voltage: ±20V Collector current: 6A Collector-emitter voltage: 1.7kV Power dissipation: 75W Gate charge: 17nC Technology: BiMOSFET™; FRED Features of semiconductor devices: high voltage Pulsed collector current: 36A Type of transistor: IGBT Turn-on time: 104ns Kind of package: tube Case: D3PAK Turn-off time: 700ns |
Produkt ist nicht verfügbar |