IXCY01N90E IXYS
Hersteller: IXYS
Description: MOSFET N-CH 900V 250MA TO252
Input Capacitance (Ciss) (Max) @ Vds: 133 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Drain to Source Voltage (Vdss): 900 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 5V @ 25µA
Power Dissipation (Max): 40W (Tc)
Rds On (Max) @ Id, Vgs: 80Ohm @ 50mA, 10V
Current - Continuous Drain (Id) @ 25°C: 250mA (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
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Technische Details IXCY01N90E IXYS
Description: MOSFET N-CH 900V 250MA TO252, Input Capacitance (Ciss) (Max) @ Vds: 133 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V, Drain to Source Voltage (Vdss): 900 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: TO-252AA, Vgs(th) (Max) @ Id: 5V @ 25µA, Power Dissipation (Max): 40W (Tc), Rds On (Max) @ Id, Vgs: 80Ohm @ 50mA, 10V, Current - Continuous Drain (Id) @ 25°C: 250mA (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tube.