Technische Details IXDN75N120 IXYS
Description: IGBT MOD 1200V 150A 660W SOT227B, Mounting Type: Chassis Mount, Package / Case: SOT-227-4, miniBLOC, Packaging: Tube, Input Capacitance (Cies) @ Vce: 5.5 nF @ 25 V, Current - Collector Cutoff (Max): 4 mA, Power - Max: 660 W, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector (Ic) (Max): 150 A, Part Status: Active, IGBT Type: NPT, Supplier Device Package: SOT-227B, NTC Thermistor: No, Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 75A, Operating Temperature: -40°C ~ 150°C (TJ), Configuration: Single, Input: Standard.
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IXDN75N120 Produktcode: 22498
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Lieblingsprodukt
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Hersteller : IXYS |
 Transistoren > MOSFET N-CH |
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miniBLOC, SOT-227B Транзистори |
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IXDN75N120 | Hersteller : IXYS |
Description: IGBT MOD 1200V 150A 660W SOT227B Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Packaging: Tube Input Capacitance (Cies) @ Vce: 5.5 nF @ 25 V Current - Collector Cutoff (Max): 4 mA Power - Max: 660 W Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 150 A Part Status: Active IGBT Type: NPT Supplier Device Package: SOT-227B NTC Thermistor: No Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 75A Operating Temperature: -40°C ~ 150°C (TJ) Configuration: Single Input: Standard |
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IXDN75N120 | Hersteller : IXYS |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 150A; SOT227B Mechanical mounting: screw Electrical mounting: screw Semiconductor structure: single transistor Collector current: 150A Gate-emitter voltage: ±20V Power dissipation: 660W Pulsed collector current: 190A Max. off-state voltage: 1.2kV Technology: NPT Type of semiconductor module: IGBT Case: SOT227B |
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