auf Bestellung 268 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 6.78 EUR |
| 10+ | 6.25 EUR |
| 50+ | 5.37 EUR |
| 100+ | 4.59 EUR |
| 250+ | 4.47 EUR |
| 500+ | 3.89 EUR |
| 1000+ | 3.56 EUR |
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Technische Details IXFA10N60P IXYS
Description: MOSFET N-CH 600V 10A TO263, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Tc), Rds On (Max) @ Id, Vgs: 740mOhm @ 5A, 10V, Power Dissipation (Max): 200W (Tc), Vgs(th) (Max) @ Id: 5.5V @ 1mA, Supplier Device Package: TO-263AA (IXFA), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1610 pF @ 25 V.
Weitere Produktangebote IXFA10N60P nach Preis ab 3.53 EUR bis 6.83 EUR
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IXFA10N60P | Hersteller : Littelfuse Inc. |
 Description: MOSFET N-CH 600V 10A TO263Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 740mOhm @ 5A, 10V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 1mA Supplier Device Package: TO-263AA (IXFA) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1610 pF @ 25 V |
auf Bestellung 1172 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFA10N60P | Hersteller : Littelfuse |
Trans MOSFET N-CH 600V 10A 3-Pin(2+Tab) D2PAK |
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IXFA10N60P | Hersteller : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 600V; 10A; 200W; TO263 Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 10A Power dissipation: 200W Case: TO263 On-state resistance: 0.74Ω Mounting: SMD Gate charge: 32nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 120ns Anzahl je Verpackung: 1 Stücke |
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IXFA10N60P | Hersteller : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 600V; 10A; 200W; TO263 Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 10A Power dissipation: 200W Case: TO263 On-state resistance: 0.74Ω Mounting: SMD Gate charge: 32nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 120ns |
Produkt ist nicht verfügbar |