Produkte > IXYS > IXFA110N15T2
IXFA110N15T2

IXFA110N15T2 IXYS


pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3A33DBB971E9820&compId=IXFA(P)110N15T2.pdf?ci_sign=1d332224bb7b48f25e03aad92d567e7b0f5abeb3 Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 110A; 480W; TO263; 85ns
Case: TO263
Kind of package: tube
Reverse recovery time: 85ns
Drain-source voltage: 150V
Drain current: 110A
On-state resistance: 13mΩ
Type of transistor: N-MOSFET
Power dissipation: 480W
Polarisation: unipolar
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 150nC
Kind of channel: enhancement
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 43 Stücke:

Lieferzeit 7-14 Tag (e)
Anzahl Preis
9+8.04 EUR
15+4.90 EUR
16+4.63 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details IXFA110N15T2 IXYS

Description: MOSFET N-CH 150V 110A TO263, Packaging: Tube, Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 110A (Tc), Rds On (Max) @ Id, Vgs: 13mOhm @ 55A, 10V, Power Dissipation (Max): 480W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8600 pF @ 25 V.

Weitere Produktangebote IXFA110N15T2 nach Preis ab 4.63 EUR bis 10.77 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
IXFA110N15T2 IXFA110N15T2 Hersteller : IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3A33DBB971E9820&compId=IXFA(P)110N15T2.pdf?ci_sign=1d332224bb7b48f25e03aad92d567e7b0f5abeb3 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 110A; 480W; TO263; 85ns
Case: TO263
Kind of package: tube
Reverse recovery time: 85ns
Drain-source voltage: 150V
Drain current: 110A
On-state resistance: 13mΩ
Type of transistor: N-MOSFET
Power dissipation: 480W
Polarisation: unipolar
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 150nC
Kind of channel: enhancement
Mounting: SMD
auf Bestellung 43 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.04 EUR
15+4.90 EUR
16+4.63 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
IXFA110N15T2 IXFA110N15T2 Hersteller : IXYS media-3323483.pdf MOSFETs 110Amps 150V
auf Bestellung 19 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+10.77 EUR
10+9.47 EUR
50+8.03 EUR
100+7.18 EUR
250+6.90 EUR
500+6.72 EUR
1000+6.65 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IXFA110N15T2 IXFA110N15T2 Hersteller : Littelfuse mosfets_n-channel_trench_gate_ixf_110n15t2_datasheet.pdf.pdf Trans MOSFET N-CH 150V 110A 3-Pin(2+Tab) D2PAK
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IXFA110N15T2 IXFA110N15T2 Hersteller : IXYS Description: MOSFET N-CH 150V 110A TO263
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 55A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8600 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH