
IXFA110N15T2 IXYS

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 110A; 480W; TO263; 85ns
Case: TO263
Kind of package: tube
Reverse recovery time: 85ns
Drain-source voltage: 150V
Drain current: 110A
On-state resistance: 13mΩ
Type of transistor: N-MOSFET
Power dissipation: 480W
Polarisation: unipolar
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 150nC
Kind of channel: enhancement
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 43 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis |
---|---|
9+ | 8.04 EUR |
15+ | 4.90 EUR |
16+ | 4.63 EUR |
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Technische Details IXFA110N15T2 IXYS
Description: MOSFET N-CH 150V 110A TO263, Packaging: Tube, Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 110A (Tc), Rds On (Max) @ Id, Vgs: 13mOhm @ 55A, 10V, Power Dissipation (Max): 480W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8600 pF @ 25 V.
Weitere Produktangebote IXFA110N15T2 nach Preis ab 4.63 EUR bis 10.77 EUR
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IXFA110N15T2 | Hersteller : IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 150V; 110A; 480W; TO263; 85ns Case: TO263 Kind of package: tube Reverse recovery time: 85ns Drain-source voltage: 150V Drain current: 110A On-state resistance: 13mΩ Type of transistor: N-MOSFET Power dissipation: 480W Polarisation: unipolar Features of semiconductor devices: thrench gate power mosfet Gate charge: 150nC Kind of channel: enhancement Mounting: SMD |
auf Bestellung 43 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFA110N15T2 | Hersteller : IXYS |
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auf Bestellung 19 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFA110N15T2 | Hersteller : Littelfuse |
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IXFA110N15T2 | Hersteller : IXYS |
Description: MOSFET N-CH 150V 110A TO263 Packaging: Tube Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Rds On (Max) @ Id, Vgs: 13mOhm @ 55A, 10V Power Dissipation (Max): 480W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8600 pF @ 25 V |
Produkt ist nicht verfügbar |